The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures
Purpose The purpose of this paper is to investigate the effect of growth temperature on the
evolution of indium incorporation and the growth process of InGaN/GaN heterostructures …
evolution of indium incorporation and the growth process of InGaN/GaN heterostructures …
Time-resolved CVD of Group 13-Nitrides
P Rouf - 2021 - diva-portal.org
Abstract Group 13 nitrides (AlN, GaN and InN) and their alloys are semiconductor materials
with a wide bandgap span covering from UV down to IR range. Their excellent electronic …
with a wide bandgap span covering from UV down to IR range. Their excellent electronic …
[PDF][PDF] Ahmad Sauffi BIN YUSOF Fabrication and Characterization of InGaN Based Solar Cell: From Material to Device
H ABDULLAH, O Sidi, US INOR, M Zamir - theses.fr
InGaN material systems stands out as an exceptional alloy with substantial potential for
modern electronic and photonic devices. The main focus of this progress has been …
modern electronic and photonic devices. The main focus of this progress has been …
Theoretical investigation of Gibb's free energy and phase diagram for InxGa1−xN nano-film system
The models for investigating the phase diagram of InGaN thin films have been anticipated by
considering the effects of strain energy, the self-energy of misfit dislocations and surface …
considering the effects of strain energy, the self-energy of misfit dislocations and surface …