Two-dimensional materials for next-generation computing technologies
Rapid digital technology advancement has resulted in a tremendous increase in computing
tasks imposing stringent energy efficiency and area efficiency requirements on next …
tasks imposing stringent energy efficiency and area efficiency requirements on next …
2D semiconductors for specific electronic applications: from device to system
The shrinking of transistors has hit a wall of material degradation and the specialized
electronic applications for complex scenarios have raised challenges in heterostructures …
electronic applications for complex scenarios have raised challenges in heterostructures …
Progress and future prospects of negative capacitance electronics: A materials perspective
Negative capacitance in ferroelectric materials has been suggested as a solution to reduce
the power dissipation of electronics beyond fundamental limits. The discovery of …
the power dissipation of electronics beyond fundamental limits. The discovery of …
Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors
FA McGuire, YC Lin, K Price, GB Rayner… - Nano …, 2017 - ACS Publications
It has been shown that a ferroelectric material integrated into the gate stack of a transistor
can create an effective negative capacitance (NC) that allows the device to overcome …
can create an effective negative capacitance (NC) that allows the device to overcome …
Is negative capacitance FET a steep-slope logic switch?
W Cao, K Banerjee - Nature communications, 2020 - nature.com
The negative-capacitance field-effect transistor (NC-FET) has attracted tremendous research
efforts. However, the lack of a clear physical picture and design rule for this device has led to …
efforts. However, the lack of a clear physical picture and design rule for this device has led to …
Negative capacitance in short-channel FinFETs externally connected to an epitaxial ferroelectric capacitor
We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of
magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) …
magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) …
Negative capacitance field effect transistor with hysteresis-free sub-60-mV/decade switching
We demonstrate a nearly hysteresis-free sub60-mV/decade subthreshold swing (SS)
operation in a p-type bulk metal-oxide-semiconductor field-effect transistor externally …
operation in a p-type bulk metal-oxide-semiconductor field-effect transistor externally …
Improved subthreshold swing and short channel effect in FDSOI n-channel negative capacitance field effect transistors
D Kwon, K Chatterjee, AJ Tan, AK Yadav… - IEEE Electron …, 2017 - ieeexplore.ieee.org
Negative capacitance (NC) FETs with channel lengths from 30 nm to, gated with ferroelectric
hafnium zirconium oxide are fabricated on fully depleted silicon-on-insulator (FDSOI) …
hafnium zirconium oxide are fabricated on fully depleted silicon-on-insulator (FDSOI) …
Effects of the variation of ferroelectric properties on negative capacitance FET characteristics
CI Lin, AI Khan, S Salahuddin… - IEEE transactions on …, 2016 - ieeexplore.ieee.org
We study the effects of the variation of ferroelectric material properties (thickness,
polarization, and coercivity) on the performance of negative capacitance FETs (NCFETs) …
polarization, and coercivity) on the performance of negative capacitance FETs (NCFETs) …
Numerical investigation of short-channel effects in negative capacitance MFIS and MFMIS transistors: Subthreshold behavior
We present a detailed TCAD analysis of the impact of length scaling and the associated
short-channel effects in the subthreshold regime of the two classes of double-gate negative …
short-channel effects in the subthreshold regime of the two classes of double-gate negative …