Energy-efficient tunneling field-effect transistors for low-power device applications: challenges and opportunities
Conventional field-effect transistors (FETs) have long been considered a fundamental
electronic component for a diverse range of devices. However, nanoelectronic circuits based …
electronic component for a diverse range of devices. However, nanoelectronic circuits based …
Impact of band gap and gate dielectric engineering on novel Si0. 1Ge0. 9-GaAs lateral N-type charge plasma based JLTFET
K Kumar, SC Sharma - Microelectronics Journal, 2022 - Elsevier
In this research article, a device called dual dielectric gate hetero-material junctionless TFET
(DD-HJLTFET) is proposed using a novel amalgamation of Si 0.1 Ge 0.9/GaAs for the first …
(DD-HJLTFET) is proposed using a novel amalgamation of Si 0.1 Ge 0.9/GaAs for the first …
Implementation of band gap and gate oxide engineering to improve the electrical performance of SiGe/InAs charged plasma-based junctionless-TFET
This paper reports on a charged plasma-based adjustable bandgap source/channel (So/Ch)
interface using a new semiconductor compound (SiGe/InAs) and bimaterial oxide …
interface using a new semiconductor compound (SiGe/InAs) and bimaterial oxide …
Challenges and solutions of the TFET circuit design
Z Lin, P Chen, L Ye, X Yan, L Dong… - … on Circuits and …, 2020 - ieeexplore.ieee.org
Steep sub-threshold interband tunnel field-effect transistors (TFETs) are promising
candidates for low-supply voltage applications with better performance than the traditional …
candidates for low-supply voltage applications with better performance than the traditional …
Comparative Investigation of Band Gap and Gate Metal Engineered Novel Si0.2Ge0.8/GaAs Charge Plasma-Based JLTFET for Improved Electrical Performance
Abstract Tunnel FETs (TFETs) need to meet certain conditions to be useful for analog/RF
circuit applications, including a steep subthreshold slope, high current driving capability, and …
circuit applications, including a steep subthreshold slope, high current driving capability, and …
Electrical performance improvement of charge plasma-based junctionless TFET using novel coalescence of SiGe/GaAs and heterogeneous gate dielectric
In this research article, a junctionless tunnel field-effect transistor (JLTFET) based on the
charge plasma concept has been proposed and analyzed using novel coalescence of …
charge plasma concept has been proposed and analyzed using novel coalescence of …
CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology
HH Radamson, Y Miao, Z Zhou, Z Wu, Z Kong, J Gao… - Nanomaterials, 2024 - mdpi.com
After more than five decades, Moore's Law for transistors is approaching the end of the
international technology roadmap of semiconductors (ITRS). The fate of complementary …
international technology roadmap of semiconductors (ITRS). The fate of complementary …
Ambipolarity Suppression of Band Gap and Gate Dielectric Engineered Novel Si0.2Ge0.8/GaAs JLTFET Using Gate Overlap Technique
This paper presents a dual dielectric gate-gate overlap hetero-structure junctionless tunnel
field effect transistor (DDG-GOHJLTFET), in which first time, a combined effort of the band …
field effect transistor (DDG-GOHJLTFET), in which first time, a combined effort of the band …
A novel negative capacitance tunnel FET with improved subthreshold swing and nearly non-hysteresis through hybrid modulation
In this letter, a novel negative capacitance tunnel FET (NC-TFET) design based on junction
depleted-modulation is proposed and experimentally demonstrated with sub-60mV/dec …
depleted-modulation is proposed and experimentally demonstrated with sub-60mV/dec …
Performance enhancement in a novel amalgamation of arsenide/antimonide tunneling interface with charge plasma junctionless-TFET
S Sharma, R Chaujar - AEU-International Journal of Electronics and …, 2021 - Elsevier
In this article, a novel combination of an arsenide/antimonide tunneling interface using
binary (InAs) and ternary (AlGaSb) compound semiconducting materials and junctionless …
binary (InAs) and ternary (AlGaSb) compound semiconducting materials and junctionless …