Vapor-liquid-solid (VLS) growth of position-controlled InP nanowires (NWs) with 10–100 μm
pitches was investigated on SiO 2-mask-patterned InP substrates. In addition to the vertical …

The photodissociation dynamics of phosphorus trichloride (PCl3) has been studied in a
supersonic beam by resonance enhanced multiphoton ionization (REMPI), using time-of …

The intermittent injection of tertiarybutylphosphine (TBP), the injection and the evacuation of
which are cyclically repeated, has been used for the selective-area etching of an InP (001) …

Reflection high energy electron diffraction (RHEED) oscillations during the etching of GaSb
and GaAs (001) planar substrates by trisdimethylaminoantimony (TDMASb) are presented …

Radial InP/InAsP/InP heterostructure nanowires (NWs) on SiO 2-mask-pattered Si substrates
were reported using self-catalyzed InP NWs. Self-catalyzed growth was performed using low …

In this review, the capabilities of molecular beam epitaxy (MBE), metalorganic vapour phase
epitaxy (MOVPE) and metalorganic molecular beam epitaxy (MOMBE) or chemical beam …

Selective area etching of SiO2-masked GaAs using trisdimethylaminoarsenic (TDMAAs) is
studied. GaAs substrates are partly masked with stripe shaped SiO2 films along the [0 1 1] …

Modulated-beam mass spectroscopy (MBMS) has been used to study the reaction
mechanism of the layer-by-layer etching of GaAs (0 0 1) using AsBr3 under molecular beam …

Selective area etching of GaAs using the metalorganic precursor, trisdimethylaminoarsenic
(TDMAAs), is investigated under various etching conditions. The (100)-GaAs surface is …

We report the surface reactions of PCl3 on the gallium-rich GaAs (100)−(4× 1)
reconstruction, studied using thermal desorption spectroscopy, Auger electron spectroscopy …