New paradigms of 2D layered material self-driven photodetectors
X Guan, Y Chen, Y Ma, H Liang, Z Zheng, C Ma, C Du… - Nanoscale, 2024 - pubs.rsc.org
By virtue of the high carrier mobility, diverse electronic band structures, excellent
electrostatic tunability, easy integration, and strong light-harvesting capability, 2D layered …
electrostatic tunability, easy integration, and strong light-harvesting capability, 2D layered …
Schottky Diodes Based on Amorphous GaO Thin Films by UV-Ozone Treatment
L Chen, G Miao, H Xie, W Xiao, G Liu… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
In this report, amorphous Ga2O3 thin film was prepared by magnetron sputtering, and the
Schottky barrier diodes (SBDs) based on amorphous Ga2O3 thin films were fabricated. The …
Schottky barrier diodes (SBDs) based on amorphous Ga2O3 thin films were fabricated. The …
Van der Waals Gap Enabled Robust Retention of MoS2 Floating‐Gate Memory for Logic‐In‐Memory Operations
W Niu, X Zou, L Tang, T Bu, S Zhang, B Jiang… - Advanced Functional … - Wiley Online Library
Floating gate (FG) memory can store data for decades without a power supply. Herein, high‐
performance MoS2 FG transistors with stable operations are demonstrated, in which a van …
performance MoS2 FG transistors with stable operations are demonstrated, in which a van …