Abstract Trivalent lanthanide (Ln 3+) ions doped semiconductor nanomaterials have
recently attracted considerable attention owing to their distinct optical properties and their …

This paper reviews the current knowledge on rare earths (REs) implanted into GaN with a
special focus on their lattice location and on the optical activation by means of thermal …

Density functional theory is used to investigate Eu, Er, and Tm rare earth (RE) impurities in
GaN, paying particular attention to their structure, energetics, and electronic properties. The …

The paper presents the studies of the intense broadband laser induced emission (LIE) of
GaN (gallium nitride) nanoceramics in both the visible and near infrared regions. The GaN …

Investigations of the luminescent properties of Pr‐, Eu‐, Tb‐and Tm‐implanted AlN thin films
at temperature in the range 9–830 K are reported. The temperature studies of …

Using both laser-excited fluorescence and optical absorption methods, we have determined
57 crystal-field (CF) energy levels of Sm3+ in crystals of Sm (Et2Dtc) 3 (bipy). The analysis of …

The crystallographic nature of the damage created in GaN by 300 keV rare earth ions has
been investigated following implantation at room temperature by varying the fluence of Er …

Much effort has been put to achieve optoelectronic devices based on Er doped GaN,
operating on the intra-4f-shell transitions of erbium. The key issue for good understanding of …

A detailed spectroscopic analysis of the crystal-field splitting of the energy levels of Eu 3+(4f
6) in single crystals of hexagonal phase aluminum nitride is reported based on assignments …

Present paper reports on luminescence characteristics of individually doped Bi3+: PZL,
Sm3+: PZL and co-doped (Bi3+/Sm3+): PZL (50P2O5-30ZnO-20LiF) glasses prepared by a …