Material descriptors for the discovery of efficient thermoelectrics
P Graziosi, C Kumarasinghe… - ACS Applied Energy …, 2020 - ACS Publications
The predictive performance screening of novel compounds can significantly promote the
discovery of efficient, cheap, and nontoxic thermoelectric (TE) materials. Large efforts to …
discovery of efficient, cheap, and nontoxic thermoelectric (TE) materials. Large efforts to …
[HTML][HTML] Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect
N Armakavicius, S Knight, P Kühne, V Stanishev… - APL Materials, 2024 - pubs.aip.org
Electron effective mass is a fundamental material parameter defining the free charge carrier
transport properties, but it is very challenging to be experimentally determined at high …
transport properties, but it is very challenging to be experimentally determined at high …
[HTML][HTML] Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1− xN/GaN heterostructures (0.07≤ x≤ …
S Knight, S Richter, A Papamichail, P Kühne… - Journal of Applied …, 2023 - pubs.aip.org
Al x Ga 1− x N/GaN high-electron-mobility transistor (HEMT) structures are key components
in electronic devices operating at gigahertz or higher frequencies. In order to optimize such …
in electronic devices operating at gigahertz or higher frequencies. In order to optimize such …
[HTML][HTML] Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect
N Armakavicius, P Kühne, A Papamichail, H Zhang… - Materials, 2024 - mdpi.com
Group-III nitrides have transformed solid-state lighting and are strategically positioned to
revolutionize high-power and high-frequency electronics. To drive this development forward …
revolutionize high-power and high-frequency electronics. To drive this development forward …
Terahertz strong-field physics in light-emitting diodes for terahertz detection and imaging
C Ouyang, S Li, J Ma, B Zhang, X Wu, W Ren… - Communications …, 2021 - nature.com
Intense terahertz (THz) electromagnetic fields have been utilized to reveal a variety of
extremely nonlinear optical effects in many materials through nonperturbative driving of …
extremely nonlinear optical effects in many materials through nonperturbative driving of …
Screening of quantum-confined Stark effect in nitride laser diodes and superluminescent diodes
In the present work we report on the observation of carrier-induced screening of built-in
electric fields in (Al, In) GaN laser diodes and superluminescent diodes. We use the …
electric fields in (Al, In) GaN laser diodes and superluminescent diodes. We use the …
Photomodulated reflectivity measurement of free-carrier dynamics in InGaN/GaN quantum wells
We describe a novel technique for measuring carrier dynamics in solid-state optical
materials based on photomodulated reflectivity (PMR) and, as an example, apply it to a …
materials based on photomodulated reflectivity (PMR) and, as an example, apply it to a …
Influence of surface optical phonon on the electronic surface states in wurtzite group-III nitride ternary mixed crystals
G Li, Z Yan - Optoelectronics Letters, 2021 - Springer
An intermediate-coupling variational method is presented to investigate the surface electron
states in wurtzite A x B 1− x N (A, B= Al, Ga and In) ternary mixed crystals (TMCs) …
states in wurtzite A x B 1− x N (A, B= Al, Ga and In) ternary mixed crystals (TMCs) …
Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall
N Armakavicius, P Kühne, A Papamichail, H Zhang… - 2024 - digitalcommons.unl.edu
Group-III nitrides have transformed solid-state lighting and are strategically positioned to
revolutionize high-power and high-frequency electronics. To drive this development forward …
revolutionize high-power and high-frequency electronics. To drive this development forward …