Grading waveguide to improve the performance of ultraviolet laser diodes
AlGaN laser diode (LD), in the ultraviolet (UV) wavelength range of 260 nm–270 nm, with
enhanced optical and electrical properties is proposed numerically in this work. A laser …
enhanced optical and electrical properties is proposed numerically in this work. A laser …
Employment of thin p-AlAs to improve near-infrared laser diodes
We modeled the effect of thin AlAs in a single quantum well separate confinement
heterostructure laser diode (SQW SCH LD) to reduce the current threshold and enhance the …
heterostructure laser diode (SQW SCH LD) to reduce the current threshold and enhance the …
Graded Cladding Layers in Infrared III-Arsenide Separate Confinement Heterostructure Laser Diodes
Graded aluminum composition in AlGaAs n-cladding and p-cladding layers have been
shown to exhibit improved optoelectronic performance in the single quantum well separate …
shown to exhibit improved optoelectronic performance in the single quantum well separate …
Stability improvement of high-power semiconductor laser diode regulators used in infrared solid-state laser applications
MA Covaci, RV Gălătuș, LA Szolga - Optical and Quantum Electronics, 2024 - Springer
Recent optoelectronics domain studies concluded the increased need to provide improved,
stable, and efficient designs to operate high-power NIR (Near-infrared) laser diodes. The …
stable, and efficient designs to operate high-power NIR (Near-infrared) laser diodes. The …