In order to handle high power with good thermal stability at RF & microwave frequencies
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …

This work demonstrates the high-frequency and high-power performance capacity of GaN
high electron mobility transistors (HEMTs) on Si substrates. Using a T-gate and-GaN …

Due to the low cost and the scaling capability of Si substrate, InAlN/GaN high-electron-
mobility transistors (HEMTs) on silicon substrate have attracted more and more attentions. In …

Device surface properties are critical for its performance such as channel electron density,
leakage current, subthreshold swing (SS), and noise in gallium nitride high-electron-mobility …

In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is
analyzed from the perspective of DC and pulse characteristics, for terminal applications …

A deeply-scaled GaN-on-Si high electron mobility transistor with a record-high cut-off
frequency (f T) of 310áGHz has been demonstrated. The device has an InAlN/GaN …

GaN-on-Si high electron mobility transistors (HEMTs) with 80ánm gate length fabricated
using Si CMOS-compatible Ta/Al ohmic and Ti/Al gate contacts are reported in this work …

Diamond is an ultimate semiconductor with exceptional physical and chemical properties,
such as an ultra‐wide bandgap, excellent carrier mobility, extreme thermal conductivity, and …

Nonlinearity operation and early gain suppression limit the high‐frequency operation of GaN‐
HEMTs. Nonlinear transconductance and resistance drop‐off at relatively large V GS are the …

In this work, high-efficiency InAlN/GaN high electron mobility transistor (HEMT) is fabricated
by recess and oxidation process under the gate (RAO) for low-voltage RF applications …