As the minimum feature size of integrated circuit elements has shrunk below 7 nm, chemical
mechanical planarization (CMP) technology has grown by leaps and bounds over the past …

Electrical isolation of the billion or so active components in each integrated device is
achieved using shallow trench isolation (STI) which requires chemical mechanical …

The effect of ceria concentration on the removal rate of silicon oxide via chemical
mechanical planarization was investigated. The removal rate decreased with increasing …

Along with the remarkable growth in the complexity of semiconductor fabrication technology,
chemical mechanical planarization (CMP) has evolved and become progressively more …

Abstract Knowledge obtained on the mechanism for altering the Ce 3+% on the ceria
surface was used to create ceria slurries that polished thermal oxide with higher material …

Surface quality of fused silica, particularly surface defect and surface roughness, is a key
factor affecting the performance of high‐power laser and short‐wave optical instrument, and …

Abstract The ratio of Ce 3+/Ce 4+ on the surface of ceria CMP slurry abrasives was
maximized by altering the slurries' chemical environment. Maximizing this ratio increases the …

CeO2 由于其适当的机械性能及高的化学活性, 更重要的是其对Si3N4/SiO2 的高选择性去除,
使其被广泛应用于浅槽隔离化学机械抛光工艺中. 本文论述了CeO2 基抛光液的抛光机制的研究 …

Surface adsorption of a homologous series of pyridine carboxylic acids on a hydrated
colloidal cerium dioxide (ceria) film is characterized using the combination of experimental …

The performances of CMP show different results according to the process and material
variables. In the case of material variable, it includes slurry, pad, conditioner, and wafer …