This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad
(SiO 2) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk …

We present the first characterization results of Timespot1, an ASIC designed in CMOS 28 nm
technology, featuring a 32× 32 pixel matrix with a pitch of 35 μm. Timespot1 is the first small …

This paper presents a generalized EKV charge-based MOSFET model that includes the
effects of trapped charges in the oxide bulk and at the silicon/oxide interface. It is shown that …

In this article, the effects of total ionizing dose (TID) irradiation and the annealing treatment
on the degradation of the commercial Cascode GaN high-electron-mobility transistors …

Ionizing and non-ionizing radiation is known to cause damages in electronic components,
resulting in reduced performance and possible failure. This is a major issue for any …

This thesis describes the results of the design and characterization work done to develop an
analog front-end for a pixel front-end Application Specific Integrated Circuit (ASIC) with time …

This paper presents an interesting phenomenon related to the effective threshold voltage
changes (δV th, eff) in the diamond layout shape MOS transistors (DLS MOSFETs). Besides …

Charge-trap transistors (CTTs) are commercial CMOS process transistors that employ their
high-k-metal-gate dielectric layers to store charge in the gate oxide for use as embedded …

V současnosti jsou kritéria na ekologii a ochranu životního prostředí velmi přísná a je
nezbytné je dodržovat. Avšak, i navzdory zavedeným pravidlům, vlastní iniciativou můžeme …

At present, the criteria for ecology and vital environment protection are rigorous and must be
respected. However, despite the established rules, our initiative can prevent potential life …