(57) ABSTRACT A semiconductor component includes a field effect transistor structure in a
Sic semiconductor body having a gate struc ture at a first surface of the SiC semiconductor …

According to an embodiment of a semiconductor device, the device includes gate trenches
formed in a SiC substrate and extending lengthwise in parallel in a first direction. Rows of …

(57) ABSTRACT A semiconductor component includes gate structures extending into a
silicon carbide body from a first surface. A width of the gate structures along a first horizontal …

A semiconductor device includes a semiconductor body and at least one device cell
integrated in the semiconductor body. Each device cell includes a drift region, a source …

(57) ABSTRACT A semiconductor device includes a plurality of gate trenches formed in a
first surface of a semiconductor body and extending lengthwise parallel to one another …

Embodiments of SiC devices and corresponding methods of manufacture are provided. In
some embodiments, the Sic device has shielding regions at the bottom of some gate …

(57) ABSTRACT A silicon carbide substrate has a trench extending from a main surface of
the silicon carbide substrate into the silicon carbide substrate. The trench has a trench width …

US10985248B2 - SiC power semiconductor device with integrated Schottky junction - Google
Patents US10985248B2 - SiC power semiconductor device with integrated Schottky junction …

H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or
switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier …

2021-01-19 Assigned to SHANGHAI HESTIA POWER INC. reassignment SHANGHAI
HESTIA POWER INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR …