Physics and chemistry of nitrogen dioxide (NO2) adsorption on gallium nitride (GaN) surface and its interaction with the yellow-luminescence-associated surface state
Surface states have been a longstanding and sometimes underestimated problem in gallium
nitride (GaN) based devices. The instability caused by surface-charge-trapping in GaN …
nitride (GaN) based devices. The instability caused by surface-charge-trapping in GaN …
Valence-band electronic structure of As-terminated GaN (0001) surfaces
Surface engineering in GaN-based technology is essential for enhancing existing devices
and exploring new opportunities, potentially turning GaN surfaces into platforms for devices …
and exploring new opportunities, potentially turning GaN surfaces into platforms for devices …
Synthesis and properties of naphthylamine derivative functionalized spiro-[fluorene-9, 9′-xanthene] for single-component white light-emitting diodes
Y Luo, M Shi, L Dong, T Xie, PO Lartey, S Zhao… - Journal of Molecular …, 2024 - Elsevier
White light-emitting diodes (LEDs) with high color purity and color-rendering index have
elicited much interest in many fields. In this work, a spirotype molecule SFX-PNA was …
elicited much interest in many fields. In this work, a spirotype molecule SFX-PNA was …
Improving Optical and Electrical Characteristics of GaN Films via 3D Island to 2D Growth Mode Transition Using Molecular Beam Epitaxy
Molecular beam epitaxy (MBE) is demonstrated as an excellent growth technique for
growing a low-defect GaN channel layer, which is crucial for controlling vertical leakage …
growing a low-defect GaN channel layer, which is crucial for controlling vertical leakage …
Investigations of Nanoscale Columnar AlxGa1-xN/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface
PV Seredin, N Kurilo, DL Goloshchapov, V Kashkarov… - Photonics, 2023 - mdpi.com
The growth of nanoscale columnar AlxGa1-xN/AlN heterostructures on the surface of silicon
substrates using plasma-activated nitrogen molecular-beam epitaxy was investigated in this …
substrates using plasma-activated nitrogen molecular-beam epitaxy was investigated in this …
Is the Mg-related GaN blue luminescence deep-level an MgO surface state?
OH Chaulker, Y Turkulets, I Shalish - arXiv preprint arXiv:2309.17212, 2023 - arxiv.org
Mg is currently the only p-type dopant in technological use in GaN. Its incorporation into the
GaN lattice is difficult. It requires a thermal treatment that only partially activates the Mg. To …
GaN lattice is difficult. It requires a thermal treatment that only partially activates the Mg. To …
Исследования наноразмерных колончатых гетероструктур AlGaN/AlN, выращенных на подложках кремния с различными модификациями поверхности
ПВ Середин, АМ Мизеров, НА Курило… - Журнал технической …, 2024 - mathnet.ru
Методом молекулярно-пучковой эпитаксией с плазменной активацией азота
исследован рост наноразмерных колончатых гетероструктур Al $ _x $ Ga $ _ {1-x} …
исследован рост наноразмерных колончатых гетероструктур Al $ _x $ Ga $ _ {1-x} …