Ohmic contacts to Gallium Nitride materials
In this review article, a comprehensive study of the mechanisms of Ohmic contact formation
on GaN-based materials is presented. After a brief introduction on the physics of Ohmic …
on GaN-based materials is presented. After a brief introduction on the physics of Ohmic …
Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation
Currently, a significant portion (~ 50%) of global warming emissions, such as CO2, are
related to energy production and transportation. As most energy usage will be electrical (as …
related to energy production and transportation. As most energy usage will be electrical (as …
Demonstration of AlN Schottky barrier diodes with blocking voltage over 1 kV
This letter reports the first demonstration of 1-kV-class AlN Schottky barrier diodes on
sapphire substrates by metal organic chemical vapor deposition. The device structure …
sapphire substrates by metal organic chemical vapor deposition. The device structure …
Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating
SAO Russell, A Pérez-Tomás… - IEEE Journal of the …, 2017 - ieeexplore.ieee.org
A method to improve thermal management of β-Ga 2 O 3 FETs is demonstrated here via
simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a …
simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a …
Physics and technology of gallium nitride materials for power electronics
Owing to its exceptional physical and electronic properties, gallium nitride (GaN) is a
promising material that can find application in the fields of high-power and high-frequency …
promising material that can find application in the fields of high-power and high-frequency …
Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures
This letter reports on the temperature behavior of the structural and electrical properties of
Ti/Al/Ni/Au contacts to AlGaN/GaN heterostructures. While Ohmic contacts formed at 750 C …
Ti/Al/Ni/Au contacts to AlGaN/GaN heterostructures. While Ohmic contacts formed at 750 C …
Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes
A Perez-Tomas, E Chikoidze, Y Dumont… - Materials today …, 2019 - Elsevier
The use of ultra-wide bandgap transparent conducting beta gallium oxide (β-Ga 2 O 3) thin
films as electrodes in ferroelectric solar cells is reported. In a new material structure for …
films as electrodes in ferroelectric solar cells is reported. In a new material structure for …
Recent development of gallium oxide thin film on GaN
HS Oon, KY Cheong - Materials science in semiconductor processing, 2013 - Elsevier
Gallium nitride (GaN) has attracted much attention due to its outstanding characteristics. It
may replace conventional semiconductor materials, such as silicon, that are approaching …
may replace conventional semiconductor materials, such as silicon, that are approaching …
Tuning electrical and thermal transport in AlGaN/GaN heterostructures via buffer layer engineering
Progress in wide bandgap, III–V material systems based on gallium nitride (GaN) has
enabled the realization of high‐power and high‐frequency electronics. Since the highly …
enabled the realization of high‐power and high‐frequency electronics. Since the highly …
A study of DC and RF transconductance for different technologies of HEMT at low and high temperatures
We report on the measured effects of temperature on the DC and RF transconductance for
several important HEMT technologies. Six different HEMT transistors were evaluated. Single …
several important HEMT technologies. Six different HEMT transistors were evaluated. Single …