From first-principles calculations, we proposed a silicon germanide (SiGe) analog of
silicene. This SiGe monolayer is stable and free from imaginary frequency in the phonon …

The variation in ferromagnetism caused by position-specific point defects in GaN (100 nm)
thin films is reported here. We observe a systematic variation of magnetic properties in GaN …

Half-metallicity due to the coexistence of metallic nature for one spin component and
insulating nature for the other is a base of spintronics devices, but was only achieved in few …

Magnetic properties of N-ion implanted GaN films (150 nm) have been reported. It is found
that GaN films grown by the MOCVD technique show strong room temperature …

The room temperature ferromagnetism at the interface between CuO and Cu 2 O
microspheres is reported in this letter. Magnetic measurement results indicate that the …

Materials possessing both ferroelectricity and ferromagnetism are regarded as ideal
candidates for electronic devices, such as nonvolatile memories. Based on first-principles …

First principles calculations based on density functional theory were performed to study the
electronic structure and magnetic properties of β-Ga2O3 in the presence of cation …

We investigated the transition energy levels of the vacancy defects in gallium nitride by
means of a hybrid density functional theory approach (DFT). We show that, in contrast to …

We have presented dielectric studies on Zn 1− x Co x O, Zn 1− x Fe x O, and Zn 1− x Fe x/2
Co x/2 O (x= doping level) semiconducting nanoparticles (∼ 2–40 nm). For all those …

Fractals are natural phenomena that exhibit a repeating pattern “exactly the same at every
scale or nearly the same at different scales”. Defect-free molecular fractals were assembled …