Raman spectroscopy is now an extremely important technique for the analysis of carbon-
based materials. It is demonstrated how it can be used to give a unique insight into …

The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …

Graphene nanoribbons (GNRs) are a family of one-dimensional (1D) materials with a
graphitic lattice structure. GNRs possess high mobility and current-carrying capability …

Fibre batteries are of significant interest because they can be woven into flexible textiles to
form compact, wearable and light-weight power solutions,. However, current methods …

Aligned semiconducting carbon nanotubes are a potential alternative to silicon in the
creation of scaled field-effect transistors (FETs) due to their easy miniaturization and high …

Our demand for ubiquitous and reliable gas detection is spurring the design of intelligent
and enabling gas sensors for the next-generation Internet of Things and Artificial …

Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …

An electronic skin (e-skin) for the next generation of robots is expected to have biological
skin-like multimodal sensing, signal encoding, and preprocessing. To this end, it is …

Semiconducting carbon nanotubes are robust molecules with nanometer-scale diameters
that can be used in field-effect transistors, from larger thin-film implementation to devices that …

Flexible/stretchable electronics, which are characterized by their ultrathin design, lightweight
structure, and excellent mechanical robustness and conformability, have garnered …