The developments in advanced interconnect technology for semiconductor logic devices for
the mitigation of plasma‐induced damage to low‐dielectric‐constant (low‐k) materials …

This paper presents an in-depth overview of the application and impact of UV/VUV light in
advanced interconnect technology. UV light application in BEOL historically was mainly …

Surfactant-templated porous organosilicate glass low-k films have been deposited by using
a tetraethoxysilane (TEOS) and methyltriethoxysilane (MTEOS) mixture with different ratios …

CoTa alloy films as diffusion barriers for Cu/low-k interconnects are studied. Crystalline
structure, thermal stability, barrier and sealing properties on low-k dielectric of CoTa alloys …

We applied time-domain Brillouin scattering (TDBS) for the characterization of porogen-
based organosilicate glass (OGS) films deposited by spin-on-glass technology and cured …

Modification of spin-on-deposited porous PMO (periodic mesoporous organosilica) ultralow-
k (ULK) SiCOH films (k= 2.33) containing both methyl terminal and methylene bridging …

The micro-capillary condensation of a new high boiling point organic reagent (HBPO), is
studied in a periodic mesoporous oxide (PMO) with∼ 34% porosity and k-value∼ 2.3. At a …

This paper reported the enhancement in thermo-mechanical properties and chemical
stability of porous SiCOH dielectric thin films fabricated with molecularly scaled pores of …

This study describes the damage caused by physical vapor deposition of TaN/Ta barriers on
porous self-assembled organosilica low-k dielectrics for IC applications. It is demonstrated …

In this work, we studied low-field leakage currents in the self-assembly based spin-on low-k
dielectrics (k= 2.2) as it may be affected by the degree of the organic template …