[HTML][HTML] Recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate
Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4
eV of GaN, have attracted great attention recently. As a typical representative, wurtzite …
eV of GaN, have attracted great attention recently. As a typical representative, wurtzite …
[HTML][HTML] Material proposal for 2D indium oxide
Realization of semiconductor materials at the two-dimensional (2D) limit can elicit
exceptional and diversified performance exercising transformative influence on modern …
exceptional and diversified performance exercising transformative influence on modern …
Thermal conductivity of epitaxial layers
DQ Tran, RD Carrascon, M Iwaya, B Monemar… - Physical Review …, 2022 - APS
Al x Ga 1− x N ternary alloys are emerging ultrawide band gap semiconductor materials for
high-power electronics applications. The heat dissipation, which mainly depends on the …
high-power electronics applications. The heat dissipation, which mainly depends on the …
Electrical and optical properties of heavily Ge-doped AlGaN
We report the effect of germanium as n-type dopant on the electrical and optical properties of
Al x Ga 1− x N layers grown by plasma-assisted molecular-beam epitaxy. The Al content has …
Al x Ga 1− x N layers grown by plasma-assisted molecular-beam epitaxy. The Al content has …
Feasibility of novel (H 3 C) n X (SiH 3) 3− n compounds (X= B, Al, Ga, In): structure, stability, reactivity, and Raman characterization from ab initio calculations
RB Dos Santos, R Rivelino, F de Brito Mota… - Dalton …, 2015 - pubs.rsc.org
We employ ab initio calculations to predict the equilibrium structure, stability, reactivity, and
Raman scattering properties of sixteen different (H3C) nX (SiH3) 3− n compounds (X= B, Al …
Raman scattering properties of sixteen different (H3C) nX (SiH3) 3− n compounds (X= B, Al …
Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates
Y Sun, F Xu, N Zhang, J Lang, J Wang, B Liu, L Wang… - …, 2021 - pubs.rsc.org
Growth of AlGaN-based multiple quantum wells (MQWs) has been attempted on nano-
patterned sapphire substrates (NPSSs). By adopting a critical-temperature approach and …
patterned sapphire substrates (NPSSs). By adopting a critical-temperature approach and …
[HTML][HTML] On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC
H Zhang, I Persson, A Papamichail… - Journal of Applied …, 2022 - pubs.aip.org
We investigate the interfaces and polarity domains at the atomic scale in epitaxial AlN and
GaN/AlN grown by hot-wall metal organic chemical vapor epitaxy on the carbon face of SiC …
GaN/AlN grown by hot-wall metal organic chemical vapor epitaxy on the carbon face of SiC …
Fast growth of crack-free thick AlN film on sputtered AlN/sapphire by introducing high-density nano-voids
Recently, there have been increasing demands for high-quality AlN/sapphire templates due
to their applications in deep ultraviolet light-emitting diodes (DUV LEDs). To acquire a low …
to their applications in deep ultraviolet light-emitting diodes (DUV LEDs). To acquire a low …
A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content
With a view to supporting the development of ultra-violet light-emitting diodes and related
devices, the compositional, emission and morphology properties of Si-doped n-type Al x Ga …
devices, the compositional, emission and morphology properties of Si-doped n-type Al x Ga …
Demonstration of Si-doped Al-rich regrown Al (Ga) N films on AlN/sapphire with> 1015/cm3 carrier concentration using CCS-MOCVD reactor
S Mukhopadhyay, P Seshadri, M Haque, S Xie… - Applied Physics …, 2024 - pubs.aip.org
Thin Si-doped Al-rich (x Al> 0.85) regrown Al (Ga) N layers were deposited on AlN on
sapphire template using metal-organic chemical vapor deposition (MOCVD) techniques …
sapphire template using metal-organic chemical vapor deposition (MOCVD) techniques …