High‐resolution X‐ray diffraction of III–V semiconductor thin films
In this chapter, we will address the structural characterization of III–V semiconductor thin
films by means of HRXRD. We first give an overview on the basic experimental apparatus …
films by means of HRXRD. We first give an overview on the basic experimental apparatus …
Heavily carbon doped GaAs nanocrystalline thin film deposited by thermionic vacuum arc method
In this paper, we introduced a new different thin film deposition method for heavily carbon
doped GaAs. Used method is thermionic vacuum arc (TVA) and first used for the carbon …
doped GaAs. Used method is thermionic vacuum arc (TVA) and first used for the carbon …
The classical oscillator model and dielectric constants extracted from infrared reflectivity measurements
RE Kroon - Infrared physics & technology, 2007 - Elsevier
The theoretical foundation of the classical oscillator model for the dielectric response of
doped semiconductors is reviewed and some errors from the literature are pointed out. Four …
doped semiconductors is reviewed and some errors from the literature are pointed out. Four …
Thermal stability of C-doped GaAs/AlAs DBR structures
MS Liang, TJ Bullough, TB Joyce - Solid-state electronics, 2008 - Elsevier
Thermal stability of heavily carbon-doped and undoped DBRs has been investigated by
reflectivity measurements and Raman spectroscopy. These analytical techniques are used …
reflectivity measurements and Raman spectroscopy. These analytical techniques are used …