Surge current capability of ultra-wide-bandgap Ga2O3 Schottky diodes

C Buttay, HY Wong, B Wang, M Xiao, C Dimarino… - Microelectronics …, 2020 - Elsevier
Abstract β-Ga 2 O 3 is an emerging ultra-wide-bandgap semiconductor material offering
superior power material limits over Si, SiC, and GaN as well as the availability of large …