Following the introduction of metamorphic high electron mobility transistors (MHEMTs) 30
years back, there has been a rapid growth in their use in advanced MMIC (monolithic …

Standard-setting, groundbreaking, authoritative, comprehensive—these often overused
words perfectly describe The Circuits and Filters Handbook, Third Edition. This standard …

A metamorphic high electron mobility transistor (mHEMT) technology featuring 35 nm gate
length has been developed. The optimized MBE grown layer sequence has a channel …

Different noise sources in HEMTs are discussed, and state-of-the-art low-noise amplifiers
based on the Fraunhofer IAF 100 nm and 50 nm gate length metamorphic HEMT (mHEMT) …

In this paper, we present the development of advanced W-band and G-band millimeter-wave
monolithic integrated circuits (MMICs) and modules for use in a high-resolution radar system …

This paper presents the design and performance of various millimeter-wave FET switches
realized in a metamorphic HEMT technology. The single-pole multi-throw switch …

In this paper, we present monolithic integrated IQ receive and transmit MMICs for wireless
data transmission in the frequency range around 240 GHz. The chipset features an RF …

It is well known that, in the millimeter (mm-wave) and sub-mm-wave range, on-wafer S-
parameter measurements are often inaccurate and suffer from serious systematic artifacts. In …

This paper reports on an E-band transmitter frontend designed to operate on a CubeSat
platform to explore high data rate downlink from a low earth orbit. The LO generation, the up …

A compact H-band (220-325 GHz) submillimeter-wave monolithic integrated circuit (S-
MMIC) amplifier has been developed, based on a grounded coplanar waveguide (GCPW) …