FinFET to GAA MBCFET: A Review and Insights
This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …
Impact of self-heating on RF/analog and linearity parameters of DMG FinFETs in underlap and overlap configurations
R Chaudhary, R Saha - Microelectronics Journal, 2023 - Elsevier
In this paper, the influence of self-heating effect (SHE) on the performance of Silicon on
Insulator (SOI) dual material gate (DMG) FinFETs in underlap and overlap configurations for …
Insulator (SOI) dual material gate (DMG) FinFETs in underlap and overlap configurations for …
High performance junctionless FDSOI SiGe channel p-FinFET with high ION/IOFF ratio and excellent SS
H Lin, X Zhao, X Luo, Y Miao, Y Zhang, Z Kong… - Materials Science in …, 2024 - Elsevier
This paper presents a novel FDSOI FinFETs with SiGe channel/Si cap layer (35 nm/5 nm)
formed on SOI wafers with 20 nm Si body. Electrical characterization result shows that JL …
formed on SOI wafers with 20 nm Si body. Electrical characterization result shows that JL …
Performance investigation of different low power SRAM cell topologies using stacked-channel tri-gate junctionless FinFET
At the sub-22 nm technology node, junctionless FinFETs are regarded as advantageous
alternatives for conventional FinFET due to their simpler fabrication and uniform doping …
alternatives for conventional FinFET due to their simpler fabrication and uniform doping …
Strained Junctionless MOSFETs: A Brief Review
Junctionless (JL) devices are new generation technology advancement. Numerous research
works have been done with focus on several different architectures of strained and …
works have been done with focus on several different architectures of strained and …
Recent Developments and Challenges in Strained Junctionless MOSFETs: A Review
Junctionless (JL) devices represent a new generation technological development. Several
studies have been conducted with an emphasis on various JL device topologies with and …
studies have been conducted with an emphasis on various JL device topologies with and …