GaN integrated circuit power amplifiers: Developments and prospects
R Nikandish - IEEE Journal of Microwaves, 2022 - ieeexplore.ieee.org
GaN integrated circuit technologies have dramatically progressed over the recent years. The
prominent feature of GaN high-electron mobility transistors (HEMTs), unparalleled output …
prominent feature of GaN high-electron mobility transistors (HEMTs), unparalleled output …
Beyond the Bandwidth Limit: A Tutorial on Low-Noise Amplifier Circuits for Advanced Systems Based on III-V Process
With the fast development of advanced communication systems, wideband low-noise
amplifiers (LNAs) have become more and more critical as they determine the overall …
amplifiers (LNAs) have become more and more critical as they determine the overall …
Design and analysis of a cascode distributed LNA with gain and noise improvement in 0.15-μm GaAs pHEMT technology
This brief presents a 2.0~ 42.0 GHz ultra-wide bandwidth Cascode distributed low-noise
amplifier (CDLNA) MMIC design. With the proposed coupled-line (CL) sections between …
amplifier (CDLNA) MMIC design. With the proposed coupled-line (CL) sections between …
A compact 1.0–12.5-GHz LNA MMIC with 1.5-dB NF based on multiple resistive feedback in 0.15-μm GaAs pHEMT technology
In this paper, a 2-stage compact wideband low-noise amplifier (LNA) monolithic microwave
integrated circuit (MMIC) with multiple resistive feedback (MRFB) is presented. From the DC …
integrated circuit (MMIC) with multiple resistive feedback (MRFB) is presented. From the DC …
Integrated balanced homodyne photonic–electronic detector for beyond 20 GHz shot-noise-limited measurements
C Bruynsteen, M Vanhoecke, J Bauwelinck, X Yin - Optica, 2021 - opg.optica.org
Optical homodyne detection is used in numerous quantum and classical applications that
demand high levels of sensitivity. However, performance is typically limited due to the use of …
demand high levels of sensitivity. However, performance is typically limited due to the use of …
Analysis and design of a broadband receiver front end for 0.1-to-40-GHz application
J Hu, K Ma - IEEE Transactions on Circuits and Systems I …, 2021 - ieeexplore.ieee.org
In this paper, a broadband receiver front end for 0.1 to 40 GHz application, fabricated using
0.15-μm GaAs E-mode pHEMT process, is reported. The receiver front end consists of a …
0.15-μm GaAs E-mode pHEMT process, is reported. The receiver front end consists of a …
A 9-to-42-GHz high-gain low-noise amplifier using coupled interstage feedback in 0.15-μm GaAs pHEMT technology
This article presents a 3-stage millimeter-wave low-noise amplifier (LNA) monolithic
microwave integrated circuit (MMIC) design for broadband applications. The proposed …
microwave integrated circuit (MMIC) design for broadband applications. The proposed …
An X/Ku dual-band switch-free reconfigurable GaAs LNA MMIC based on coupled line
C Xie, Z Yu, C Tan - IEEE Access, 2020 - ieeexplore.ieee.org
This article presents an X/Ku dual-band switch-free reconfigurable GaAs low-noise amplifier
(LNA) realized by inter-stage and output-stage coupled lines. This article is the first switch …
(LNA) realized by inter-stage and output-stage coupled lines. This article is the first switch …
The (R) evolution of distributed amplifiers: From vacuum tubes to modern CMOS and GaN ICs
G Nikandish, RB Staszewski… - IEEE Microwave …, 2018 - ieeexplore.ieee.org
Broadband amplification of signals is desirable in many applications such as high-speed
data communications, high-resolution imaging systems, optoelectronics, and …
data communications, high-resolution imaging systems, optoelectronics, and …
A Broadband 10–43-GHz High-Gain LNA MMIC Using Coupled-Line Feedback in 0.15-μm GaAs pHEMT Technology
In this letter, a 10–43-GHz low-noise amplifier (LNA) monolithic microwave integrated circuit
(MMIC) is designed in a commercial 0.15-GaAs E-mode pseudomorphic high electron …
(MMIC) is designed in a commercial 0.15-GaAs E-mode pseudomorphic high electron …