GaN HEMT on Si substrate with diamond heat spreader for high power applications
Currently, the GaN-on-silicon high electron mobility transistor (HEMT) is a promising
candidate to replace the Si Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for …
candidate to replace the Si Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for …
A numerical investigation of heat suppression in HEMT for power electronics application
Abstract In this paper, AlGaN/GaN High Electron Mobility Transistor (HEMT) with stacked
passivation (Diamond/SiN) is proposed and investigated. The implementation of stacked …
passivation (Diamond/SiN) is proposed and investigated. The implementation of stacked …
Research on the Gunn Oscillation Effect of GaN HEMT with Field Plate Structure in the Terahertz Frequency Band
R Yuan, J Wu, L Wang - Electronics, 2024 - mdpi.com
Based on the enormous application potential of GaN-based high electron mobility transistors
(HEMT) in high-frequency and high-power scenarios, this article focuses mainly on the study …
(HEMT) in high-frequency and high-power scenarios, this article focuses mainly on the study …
Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator
The self-heating effects (SHEs) on the electrical characteristics of the GaN MOSFETs with a
stacked TiO2/Si3N4 dual-layer insulator are investigated by using rigorous TCAD …
stacked TiO2/Si3N4 dual-layer insulator are investigated by using rigorous TCAD …
Enhancing responsivity and detectevity of Si-ZnO photodetector with growth of densely packed and aligned hexagonal nanorods
High-performance photodiodes are desirable forultrahigh speed optical communication and
highresolution optical instrumentation. This paper reports both theoretical and experimental …
highresolution optical instrumentation. This paper reports both theoretical and experimental …
Variable thermal resistance model of GaN-on-SiC with substrate scalability
A drain current model for an AlGaN/GaN high-electron-mobility transistor (HEMT) with
variable thermal resistance is developed. For the first time, a variable thermal resistance in …
variable thermal resistance is developed. For the first time, a variable thermal resistance in …
Algan/Gan Based Hemt Using Double Gate with Field Plate for Microwave Power Applications
Recently semiconductor devices plays great role in high power applications due to key
feature of hetero-junction structure. AlGaN/GaN High Electron Mobility Transistors (HEMT) …
feature of hetero-junction structure. AlGaN/GaN High Electron Mobility Transistors (HEMT) …