Emergent ferroelectricity in subnanometer binary oxide films on silicon
The critical size limit of voltage-switchable electric dipoles has extensive implications for
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …
Polarization Switching and Correlated Phase Transitions in Fluorite‐Structure ZrO2 Nanocrystals
Unconventional ferroelectricity in fluorite‐structure oxides enables tremendous opportunities
in nanoelectronics owing to their superior scalability and silicon compatibility. However, their …
in nanoelectronics owing to their superior scalability and silicon compatibility. However, their …
Ferroelectric Orthorhombic ZrO2 Thin Films Achieved Through Nanosecond Laser Annealing
A new approach for the stabilization of the ferroelectric orthorhombic ZrO2 films is
demonstrated through nanosecond laser annealing (NLA) of as‐deposited Si/SiOx/W (14 …
demonstrated through nanosecond laser annealing (NLA) of as‐deposited Si/SiOx/W (14 …
A robust high-performance electronic synapse based on epitaxial ferroelectric Hf0. 5Zr0. 5O2 films with uniform polarization and high Curie temperature
Ferroelectric tunnel junction (FTJ) is a promising emerging memristor for the artificial
synapse in neuro-inspired computing, which has parallel data processing and low power …
synapse in neuro-inspired computing, which has parallel data processing and low power …
Crystallographic structure and ferroelectricity of epitaxial hafnium oxide thin films
Devices using silicon-based materials have been studied and developed by the
semiconductor industry. With silicon-based materials reaching their performance limit, there …
semiconductor industry. With silicon-based materials reaching their performance limit, there …
Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO2 Films
Over a decade ago, ferroelectricity was discovered in doped HfO2 thin films. The HfO2-
based thin films have attracted much attention due to their remarkable scalability and CMOS …
based thin films have attracted much attention due to their remarkable scalability and CMOS …
Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Films
In the last decades, ferroelectricity has been discovered in Si-doped HfO2 and Hf1–x Zr x O2
thin films, and the origin of ferroelectricity is considered to be the presence of the polar Pca …
thin films, and the origin of ferroelectricity is considered to be the presence of the polar Pca …
Stabilization of the epitaxial rhombohedral ferroelectric phase in by surface energy
A El Boutaybi, T Maroutian, L Largeau, S Matzen… - Physical Review …, 2022 - APS
Doped HfO 2 and HfO 2-ZrO 2 compounds are gaining significant interest thanks to their
ferroelectric properties in ultrathin films. Here, we show that ZrO 2 could be a playground for …
ferroelectric properties in ultrathin films. Here, we show that ZrO 2 could be a playground for …
Ferroelectric ZrO 2 phases from infrared spectroscopy
We investigate ferroelectric thin films of ZrO2 experimentally and theoretically using infrared
(IR) absorption spectroscopy coupled with density functional theory (DFT) calculations. The …
(IR) absorption spectroscopy coupled with density functional theory (DFT) calculations. The …
[HTML][HTML] Ferroelectric (hf, zr, la) o2 films
Abstract The impact of La, Zr and Hf content on the crystal phases and ferroelectric and
dielectric properties of (Hf, Zr, La) O 2 has been determined by investigating epitaxial films …
dielectric properties of (Hf, Zr, La) O 2 has been determined by investigating epitaxial films …