The atomic layer technique is generating a lot of excitement and study due to its profound
physics and enormous potential in device fabrication. This article reviews current …

Selectivity was examined between SiO2 and SiN x during thermal atomic layer etching
(ALE) and spontaneous etching. Thermal ALE of SiO2 and SiN x was explored using …

Thermal atomic layer etching (ALE) of CoO, ZnO, Fe2O3, and NiO was achieved using
chlorination and ligand-addition reactions at 250° C. This two-step process was …

Thermal atomic layer etching (ALE) of amorphous and crystalline aluminum nitride was
performed using sequential exposures of hydrogen fluoride (HF) or xenon difluoride (XeF2) …

The thermal etching of first row transition metal oxides was surveyed at 250° C using
acetylacetone (Hacac) and ozone (O3). The metal oxides include Sc2O3, V2O5, VO2 …

The thermal atomic layer etching (ALE) of nickel was demonstrated using sequential
chlorination and ligand-addition reactions. Nickel chlorination was achieved using SO2Cl2 …

Thermal atomic layer etching (ALE) of CoO was demonstrated using sequential exposures
of acetylacetone (Hacac) and ozone (O 3). During the surface reactions, Hacac can remove …

Thermal atomic layer etching (ALE) can be achieved with sequential, self-limiting surface
reactions. One mechanism for thermal ALE is based on fluorination and ligand-exchange …

After more than five decades, Moore's Law for transistors is approaching the end of the
international technology roadmap of semiconductors (ITRS). The fate of complementary …

Thermal atomic layer etching (ALE) of cobalt was developed using sulfuryl chloride
(SO2Cl2) for chlorination and either tetramethylethylenediamine (TMEDA) or …