Radiation tolerance is determined as the ability of crystalline materials to withstand the
accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences …

Gallium oxide, and in particular its thermodynamically stable β-Ga 2 O 3 phase, is within the
most exciting materials in research and technology nowadays due to its unique properties …

Ga2O3 is a wide-band gap semiconductor of emergent importance for applications in
electronics and optoelectronics. However, vital information of the properties of complex …

Polymorphs are common in nature and can be stabilized by applying external pressure in
materials. The pressure and strain can also be induced by the gradually accumulated …

Atomic scale details of the formation of point defects and their evolution to phase
transformation in silicon (Si) implanted β-Ga 2 O 3 were studied using high resolution …

The mechanisms of ion-induced defect formation and physical characteristics promoting
radiation tolerance of wide and ultra-wide bandgap semiconductors are not well-studied and …

Ion implantation induced phase transformation and the crystal structure of a series of ion
implanted β-Ga 2 O 3 samples were studied using electron diffraction, high resolution …

β-Ga 2 O 3 is an emerging ultra-wide bandgap semiconductor, holding a tremendous
potential for power-switching devices for next-generation high power electronics. The …

In this paper, we employ in situ transmission electron microscopy to study the disorder–order
phase transition from amorphous Ga 2 O 3 to γ-Ga 2 O 3 and then to β-Ga 2 O 3. The in situ …

Defect accumulation and annealing phenomena in Si-implanted monoclinic gallium oxide (β-
Ga 2 O 3) wafers, having (2 01)⁠,(010), and (001) orientations, were studied by Rutherford …