Magnetic or magnetoresistive tunnel junctions (MTJs) hav ing diffusion stop layers to
eliminate or reduce diffusion of oxygen, nitrogen or other particles from the barrier layer to …

(57) ABSTRACT A magnetic memory is described. The magnetic memory includes magnetic
junctions and at least one spin-orbit inter action (SO) active layer. Each of the magnetic …

A magnetic memory cell having a ferromagnetic free layer and a ferromagnetic pinned
reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane mag …

A spin-torque transfer memory random access memory (STTMRAM) element includes a
fixed layer formed on top of a substrate and a tunnel layer formed upon the fixed layer and a …

Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions
(MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically …

A system and method for forming a magnetic tunnel junction (MTJ) storage element utilizes a
composite free layer structure. The MTJ element includes a stack comprising a pinned layer …

A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned
reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane …

Co-pending US Appl. No. 1 1/280,523, filed Nov. 16, 2005," Low Resistance Tunneling
Magnetoresistive Sensor with Natural Oxi dized Double Mg Barrier', assigned to the same …

(57) ABSTRACT A magnetic memory cell including a piezoelectric material, and methods of
operating the memory cell are provided. The memory cell includes a stack, and the …

BACKGROUND This application relates to magnetic materials and struc tures having at least
one free ferromagnetic layer. Various magnetic materials use multilayer structures which …