Stress-Induced Cracks in Triangular Defects of Thick 4H-SiC Homoepitaxial Layers
S Zhao, Y Li, M Wei, Y Pei, J Jiao, L Wang, W Zhao… - Vacuum, 2025 - Elsevier
Our research investigated stress-induced cracking in triangular defects within thick 4H-SiC
homoepitaxial layers. While rarely observed in thinner layers, cracks were frequently …
homoepitaxial layers. While rarely observed in thinner layers, cracks were frequently …
Wavelength dependence of nitrogen vacancy center charge cycling
AA Wood, A Lozovoi, RM Goldblatt, CA Meriles… - Physical Review B, 2024 - APS
Optically active spin qubits in wide-band-gap semiconductors exist in several charge states,
though typically only specific charge states exhibit desirable spin or photonic properties. An …
though typically only specific charge states exhibit desirable spin or photonic properties. An …
Quantum electrometry of non-volatile space charges in diamond
The microscopic electric environment surrounding a spin defect in a wide-bandgap
semiconductor plays a determining role in the spin coherence and charge stability of a given …
semiconductor plays a determining role in the spin coherence and charge stability of a given …