The review article describes the interplay of fundamental research and advanced processes
that have made SiC a unique semiconductor material for power electronic devices. Related …

Silicon carbide (SiC) is a wide-bandgap semiconductor material that is viable for the next
generation of high-performance and high-power electrical devices. In general, bulk SiC …

A modeling approach for the numerical simulation of heat and mass transfer during SiC
sublimation growth in inductively heated physical vapor transport (PVT) reactors is …

Abstract 4H silicon carbide (4H-SiC) is one of the most promising candidates in high-power
and high-frequency devices, owing to its excellent properties such as wide bandgap, high …

Sublimation growth of SiC bulk crystals in tantalum container is studied both experimentally
and theoretically. The model of heterogeneous processes occurred on the side wall of the …

In the AlN crystal growth process, the expansion of the diameter leading to the
inhomogeneity of the temperature field is gradually prominent, and how to realize the …

Using digital X-ray imaging we have investigated the on-going processes during physical
vapor transport growth of SiC. A high-resolution and high-speed X-ray detector based on …

This work paper was presented as a keynote lecture at the international conference on
diamond and related materials in Lisbon (Portugal) in the year 2022. This paper summarizes …

The present paper gives an overview of the different routes to grow SiC single crystals. The
focus is put on the new emerging processes compared with the well established ones. A …

Different computational tools have helped to provide additional information on the
sublimation growth of SiC single crystals by the modified-Lely method. The modelling work …