Carriers are currently introducing 5G wireless systems at sub-6, 28, 38, 57–71, and 71–86 GHz. As 5G is commercially deployed, research into the next-generation communication …
We report a high-efficiency G-band power amplifier in 250nm InP HBT technology. The amplifier has four capacitively linearized common base stages. Four power cells are …
100–300GHz wireless systems can provide very high data rates per signal beam, and, given the short wavelengths, even compact arrays can contain many elements, and hence can …
S Hassanzadehyamchi, A Alizadeh… - IEEE Journal of Solid …, 2023 - ieeexplore.ieee.org
This article proposes a novel approach on cascaded series-connected power amplifier (PA) design. High-frequency transistor modeling is employed to analyze the stacked cell, and a …
Y Kumazaki, S Ozaki, N Okamoto… - IEEE Journal of the …, 2024 - ieeexplore.ieee.org
This paper demonstrated high-output-power and high-efficiency power amplifier (PA) monolithic microwave-integrated circuit (MMIC) at 300-GHz band (252–296 GHz) with the …
The transforming process in the scope of agriculture towards Smart Agriculture is an essential step to fulfill growing demands in respect to nourishment. Crucial challenges …
U Soylu, A Alizadeh, M Seo… - IEEE Journal of Solid …, 2023 - ieeexplore.ieee.org
We report 280 GHz 8: 1 and 16: 1 frequency multipliers in 250-nm indium phosphide (InP) HBT technology. The 8: 1 multiplier uses three cascaded push-push emitter-coupled-pairs …
Y Jang, Y Jeon, J Jeong - IEEE Access, 2022 - ieeexplore.ieee.org
A broadband power amplifier in a 250-nm InP HBT technology is presented, working at full- band (220–320 GHz). A cascode transistor is employed as a power cell to achieve high gain …
U Soylu, A Alizadeh, ASH Ahmed… - 2023 18th European …, 2023 - ieeexplore.ieee.org
We report a fully integrated 272 GHz direct-conversion transmitter in 250nm InP HBT technology. The transmitter has more than 18dB conversion gain over 264-285GHz …