Ic and array technologies for 100-300ghz wireless

MJW Rodwell, ASH Ahmed, M Seo… - 2022 IEEE Custom …, 2022 - ieeexplore.ieee.org
100–300 GHz wireless systems can provide very high data rates per signal beam, and,
given the short wavelengths, even compact arrays can contain many elements, and hence …

Indium-Phosphide Transistors: A Review of Current State and Suitability for Commercial> 100-GHz Wireless Communication Systems

B Markman, M Schröter - IEEE Microwave Magazine, 2024 - ieeexplore.ieee.org
Carriers are currently introducing 5G wireless systems at sub-6, 28, 38, 57–71, and 71–86
GHz. As 5G is commercially deployed, research into the next-generation communication …

A 190-210GHz Power Amplifier with 17.7-18.5 dBm Output Power and 6.9-8.5% PAE

ASH Ahmed, U Soylu, M Seo, M Urteaga… - 2021 IEEE MTT-S …, 2021 - ieeexplore.ieee.org
We report a high-efficiency G-band power amplifier in 250nm InP HBT technology. The
amplifier has four capacitively linearized common base stages. Four power cells are …

100-300GHz Wireless: ICs, Arrays, and Systems

MJW Rodwell, AA Farid, ASH Ahmed… - 2021 IEEE BiCMOS …, 2021 - ieeexplore.ieee.org
100–300GHz wireless systems can provide very high data rates per signal beam, and, given
the short wavelengths, even compact arrays can contain many elements, and hence can …

A 200-GHz Power Amplifier With 18.7-dBm in 45-nm CMOS SOI: A Model-Based Large-Signal Approach on Cascaded Series-Connected Power Amplification

S Hassanzadehyamchi, A Alizadeh… - IEEE Journal of Solid …, 2023 - ieeexplore.ieee.org
This article proposes a novel approach on cascaded series-connected power amplifier (PA)
design. High-frequency transistor modeling is employed to analyze the stacked cell, and a …

High Output Power and Efficiency 300-GHz Band InP Based MOS-HEMT Power Amplifiers With Composite-Channel and Double Side Doping

Y Kumazaki, S Ozaki, N Okamoto… - IEEE Journal of the …, 2024 - ieeexplore.ieee.org
This paper demonstrated high-output-power and high-efficiency power amplifier (PA)
monolithic microwave-integrated circuit (MMIC) at 300-GHz band (252–296 GHz) with the …

Agricultural on-demand networks for 6G enabled by THz communication

D Lindenschmitt, C Fischer, S Haussmann… - arXiv preprint arXiv …, 2024 - arxiv.org
The transforming process in the scope of agriculture towards Smart Agriculture is an
essential step to fulfill growing demands in respect to nourishment. Crucial challenges …

280-GHz Frequency Multiplier Chains in 250-nm InP HBT Technology

U Soylu, A Alizadeh, M Seo… - IEEE Journal of Solid …, 2023 - ieeexplore.ieee.org
We report 280 GHz 8: 1 and 16: 1 frequency multipliers in 250-nm indium phosphide (InP)
HBT technology. The 8: 1 multiplier uses three cascaded push-push emitter-coupled-pairs …

H-Band Broadband Balanced Power Amplifier in 250-nm InP HBT Technology Using Impedance-Transforming Balun

Y Jang, Y Jeon, J Jeong - IEEE Access, 2022 - ieeexplore.ieee.org
A broadband power amplifier in a 250-nm InP HBT technology is presented, working at full-
band (220–320 GHz). A cascode transistor is employed as a power cell to achieve high gain …

A 272 GHz InP HBT Direct-Conversion Transmitter with 14.1 dBm Output Power

U Soylu, A Alizadeh, ASH Ahmed… - 2023 18th European …, 2023 - ieeexplore.ieee.org
We report a fully integrated 272 GHz direct-conversion transmitter in 250nm InP HBT
technology. The transmitter has more than 18dB conversion gain over 264-285GHz …