With the increase in penetration of power electronic converters in the power systems, a
demand for overcurrent/overloading capability has risen for the fault clearance duration. This …

This paper presents the design process of a 312-kVA three-phase silicon carbide inverter
using ten parallel-connected metal-oxide-semiconductor field-effect-transistor power …

Operation of parallel-connected 4H-SiC vertical junction field effect transistors (VJFETs) from
SemiSouth is modeled using numerical simulations and experimentally verified. The …

This paper systematically investigates the influence of device parameters spread on the
current distribution of paralleled silicon carbide (SiC) MOSFETs. First, a variation coefficient …

Silicon carbide as an emerging technology offers potential benefits compared with the
currently used silicon. One of these advantages is higher efficiency. If this is targeted …

Silicon Carbide high-power modules populated with several parallel-connected junction
field-effect transistors must be driven properly. Parasitic elements could act as drawbacks in …

Parallel connection of silicon carbide power modules is a possible solution in order to reach
higher current ratings. Nevertheless, it must be done appropriately to ensure a feasible …

The 4H-SiC Schottky barrier diodes for high temperature operation over 200° C have been
developed using buried grids formed by implantation. Compared to a conventional JBS-type …

Parallel connection of silicon carbide power modules is a possible solution in order to reach
higher current ratings. Nevertheless, it must be done appropriately to ensure a feasible …