A novel trench diode for Reverse Conducting (RC) IGBTs is proposed. A Schottky Controlled
injection (SC) concept is applied to the diode area of the RC-IGBT. The reverse recovery …

The effect of localized lifetime control technique on the static and dynamic behavior of a
power PiN diode is investigated in this paper. Mixed mode device circuit simulations are …

We present a newly developed 4500 V and 2000 A Press-Pack IGBT module for power
transmission and industrial voltage drives applications. The module employs SPT+ IGBT …

A novel Reverse Conducting IGBT (RC-IGBT) with a low impurity concentration p-anode is
proposed. To improve an embedded anti-parallel diode characteristic, a low hole injection …

This paper presents an ultra small reverse recovery charge Qrr diode (USQ-Diode) for
Insulated Gate Bipolar Transistor (IGBT) modules. The USQ-Diode has a thin p-layer anode …

In this paper, a low switching loss built-in diode of a high-voltage reverse-conducting
insulated gate bipolar transistor (RC-IGBT) is proposed without deteriorating IGBT …

In this paper, low switching loss diode of 600V RC-IGBT is proposed without largely
changing wafer process or deteriorating IGBT characteristics by device simulation and real …

In this paper, a newly developed diode technology platform for 3.3 kV, 4.5 kV and 6.5 kV
diodes for next generation high power IGBT modules will be presented. The new diode …

Local lifetime control and emitter efficiency control techniques and their effect on static and
dynamic behavior of power PiN diode are investigated in this article. Mixed-mode device …

A semiconductor device that helps to prevent the occurrence of current localization in the
vicinity of an electrode edge and improves the reverse-recovery withstanding capability. The …