Electrical characterisation of photosensitive Si/W–Ge oxide composite heterojunction
S Aktas - Optical Materials, 2022 - Elsevier
Abstract Tungsten-germanium (W–Ge) oxide composite thin film was grown on the p-type Si
wafer which already has an Al ohmic contact, with the co-deposition technique by using …
wafer which already has an Al ohmic contact, with the co-deposition technique by using …
Dilute nitride resonant-cavity light emitting diode
Abstract Resonant cavity LEDs (RCLEDs) are a viable and low-cost alternative light source
to lasers for optical communication systems in the 1.3 µm O-band. Most work in this area has …
to lasers for optical communication systems in the 1.3 µm O-band. Most work in this area has …
3.3 µm interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth
DA Diaz-Thomas, O Stepanenko… - Semiconductor …, 2020 - iopscience.iop.org
We demonstrate an interband cascade resonant cavity light emitting diode (IC-RCLED)
operating near 3.3 µm at room temperature. The device is composed of a Sb-based type-II …
operating near 3.3 µm at room temperature. The device is composed of a Sb-based type-II …
Yüksek Lisans Tezi
IIMD İSLAMCILIK, İIM CEMİYETİ - 2008 - search.proquest.com
TC BALIKESİR ÜNİVERSİTESİ SOSYAL BİLİMLER ENSTİTÜSÜ TARİH ANABİLİM DALI II.
MEŞRUTİYET DÖNEMİNDE İSLAMCILIK Page 1 TC BALIKESİR ÜNİVERSİTESİ SOSYAL …
MEŞRUTİYET DÖNEMİNDE İSLAMCILIK Page 1 TC BALIKESİR ÜNİVERSİTESİ SOSYAL …
A study on the voltage-dependent response of a GaInNAs-based pin photodetector with a quasi-cavity
We present a characterisation of a GaInNAs/GaNAs quantum well-based photodetector with
a bottom distributed Bragg reflector (quasi-cavity). The detector is designed to be used at the …
a bottom distributed Bragg reflector (quasi-cavity). The detector is designed to be used at the …
Effect of annealing process on hot-electron energy relaxation rates in n-type modulation-doped Ga0. 68In0. 32N0. 017As/GaAs quantum wells via deformation …
Hot electrons relax by interacting with phonons, so information about the electron-phonon
interaction mechanisms are obtained by examining the cooling processes of hot electrons …
interaction mechanisms are obtained by examining the cooling processes of hot electrons …
Determination of the acoustic phonon-hot carriers interaction in n-and p-type modulation-doped GaInNAs/GaAs quantum wells
We report on the power loss mechanisms of hot carries in as-grown and annealed n-and p-
type modulation-doped GaAs/Ga 0.68 In 0.32 N y As 1-y (y= 0.009, and 0.012) quantum well …
type modulation-doped GaAs/Ga 0.68 In 0.32 N y As 1-y (y= 0.009, and 0.012) quantum well …
Integer quantum Hall effect measurement analysis in Ga0. 68In0. 32N0. 017As/GaAs quantum wells with various annealing time
Abstract The integer quantum Hall Effect (QHE) and magnetoresistance measurements are
carried out at temperature range 1.8 K and 40 K under a magnetic field up to 11 T to …
carried out at temperature range 1.8 K and 40 K under a magnetic field up to 11 T to …
A study of electric transport in n-and p-type modulation-doped GaInNAs/GaAs quantum well structures under a high electric field
We present the results of longitudinal carrier transport under a high electrical field in n-and p-
type modulation-doped Ga 0.68 In 0. 32 N y As 1− y/GaAs (y= 0.009, 0.017) quantum well …
type modulation-doped Ga 0.68 In 0. 32 N y As 1− y/GaAs (y= 0.009, 0.017) quantum well …
Temporal response of dilute nitride multi-quantum-well vertical cavity enhanced photodetector
The temporal response characteristics of a GaInNAs-based vertical resonant cavity
enhanced photodetector device are presented for operation at λ≈ 1.3 μ m. The absorption …
enhanced photodetector device are presented for operation at λ≈ 1.3 μ m. The absorption …