A new technological approach is needed for the development of emerging electronic
components and systems within the Internet of Things (IoT) era. New advancements and …

Hybrid bonding is the technology for interchip ultrahigh-density interconnect at pitch smaller
than 10 μ m. The feasibility at wafer-to-wafer level bonding with bond pad pitch of sub-0.5 μ …

A newly developed temporary bonding method for die population on a carrier wafer with
CVD dielectric film has been demonstrated. With this integration approach, the temporary …

The demand for technologies enabling higher performance, greater capacity at lower cost
has been growing. Wafer-to-Wafer hybrid bonding for three-dimensional architectures …

We report the integration and process challenges of self assembly in die-to-wafer hybrid
bonding. The bonding quality, step height and Cu integrity are discussed in the context of …

As the feature sizes of integrated circuits approach their physical limits, 3D packaging has
emerged as a crucial technology for enhancing integration and extending Moore's Law. To …

IR laser debonding has been developed enabling the combination of silicon as a carrier
substrate as well as laser debonding through silicon. One solutions is in advanced …

Universal chiplet interconnect express (UCIe) is an open industry standard interconnect for a
chiplet ecosystem in which chiplets from multiple suppliers can be packaged together. The …

Dielectric layer of hybrid bonding is one of the most critical materials for the yield and
reliability because it is the majority of the bonding surface/interface. This paper …

Die-to-wafer hybrid bonding is a crucial technology in advanced chiplet integration systems.
Temporary die bonding on wafers and subsequent debonding are key aspects of this …