The test of a high-power, semi-insulating, linear-mode, vertical 6H-SiC PCSS
Q Wu, T Xun, Y Zhao, H Yang… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
A high-power photoconductive semiconductor switch (PCSS) working in linear mode can be
used for RF generation by modulating the illuminating light. Such a PCSS constructed of a …
used for RF generation by modulating the illuminating light. Such a PCSS constructed of a …
Optimization and implementation of a solid state high voltage pulse generator that produces fast rising nanosecond pulses
JM Sanders, A Kuthi… - IEEE Transactions on …, 2011 - ieeexplore.ieee.org
In this paper athree-stage pulse generator architecture capable of generating high voltage,
high current pulses is reported and system issues are presented. Design choices and …
high current pulses is reported and system issues are presented. Design choices and …
Transient and steady state study of a rear-illuminated 6H-SiC photoconductive semiconductor switch
In this paper characteristics of a linear, 6H-SiC photoconductive semiconductor switch are
presented. The vanadium-doped semi-insulated 6H-SiC PCSS device is designed in a back …
presented. The vanadium-doped semi-insulated 6H-SiC PCSS device is designed in a back …
High Current Density Diamond Photoconductive Semiconductor Switches with a Buried, Metallic Conductive Channel
Laterally configured diamond photoconductive semiconductor switches (PCSS) with a
buried, metallic p+ current channel are reported. Above bandgap (nm) optical triggering …
buried, metallic p+ current channel are reported. Above bandgap (nm) optical triggering …
Influence of different illumination profiles on the on-state resistances of silicon carbide photoconductive semiconductor switches
L Wang, T Xun, H Yang, J Liu, Y Zhang - Review of Scientific …, 2014 - pubs.aip.org
Characteristics of a silicon-carbide (SiC) photoconductive switch under different illumination
profiles are presented. We triggered a V-doped semi-insulated 6H-SiC switch with lateral …
profiles are presented. We triggered a V-doped semi-insulated 6H-SiC switch with lateral …
影响碳化硅光导开关最小导通电阻的因素
刘金锋， 袁建强， 刘宏伟， 赵越， 姜苹， 李洪涛… - 强激光与粒子束, 2012 - cpsjournals.cn
采用2 种电阻率的钒掺杂半绝缘6H-SiC 晶体制作了横向结构的碳化硅光导开关,
分别加载不同的偏压, 并使用不同能量的激光触发开展光电导实验. 对比实验结果表明 …
分别加载不同的偏压, 并使用不同能量的激光触发开展光电导实验. 对比实验结果表明 …
Semiconductor device with electrical overstress (EOS) protection
AP Ritenour - US Patent 9,917,080, 2018 - Google Patents
ABSTRACT A semiconductor device with electrical overstress (EOS) protection is disclosed.
The semiconductor device includes a semi-insulating layer, a first contact disposed onto the …
The semiconductor device includes a semi-insulating layer, a first contact disposed onto the …
V 掺杂6H-SiC 光导开关制备与性能研究
周天宇， 刘学超， 代冲冲， 黄维， 施尔畏 - 强激光与粒子束, 2014 - cpsjournals.cn
采用V 掺杂半绝缘6H-SiC 单晶衬底材料制备了平面电极型大功率SiC 光导开关, 用强度为150
μJ/mm2, 波长为355 nm 的脉冲激光对开关进行触发, 在1~ 14 kV 的外加电压范围内对光导开关 …
μJ/mm2, 波长为355 nm 的脉冲激光对开关进行触发, 在1~ 14 kV 的外加电压范围内对光导开关 …
High-purity semi-insulating 4H-SiC as a high-voltage switch material
A photoconductive semiconductor switch (PCSS) fabricated from high-purity semi-insulating
(HPSI) 4H-SiC is presented. This switch shows improvement over similar designs based on …
(HPSI) 4H-SiC is presented. This switch shows improvement over similar designs based on …
Dual gate III-switch for high voltage current relay
B Hughes, KS Boutros - US Patent 10,447,261, 2019 - Google Patents
Photo-switchable relays and switches and dual gate III switches having a photo switchable
normally-off region located in the channel layer of the device are disclosed where irradiation …
normally-off region located in the channel layer of the device are disclosed where irradiation …