Analysis of the main acceptor defect in p-type GaAsN grown by chemical beam epitaxy

N–H related defect playing the role of acceptor in GaAsN grown by chemical beam epitaxy

O Elleuch, L Wang, KH Lee, K Ikeda, N Kojima… - Journal of Crystal …, 2017 - Elsevier
The N–H related defects at 3124 cm-1 are found to be acceptors in GaAsN grown by
chemical beam epitaxy (CBE), by comparing the concentrations of N–H defects with those of …
被引用次数：3 相关文章 所有 4 个版本

Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

O Elleuch, L Wang, KH Lee, K Demizu… - Journal of Applied …, 2015 - pubs.aip.org
The hole traps associated with high background doping in p-type GaAsN grown by chemical
beam epitaxy are studied based on the changes of carrier concentration, junction …
被引用次数：4 相关文章 所有 5 个版本

Identification of N–H related acceptor defects in GaAsN grown by chemical beam epitaxy using hydrogen isotopes

O Elleuch, L Wang, KH Lee, K Ikeda, N Kojima… - Journal of Alloys and …, 2015 - Elsevier
The N–H related acceptor defects in GaAsN grown by chemical beam epitaxy (CBE) are
studied by hydrogen isotopes, H and D. When the films are grown by a conventional arsenic …
被引用次数：3 相关文章 所有 5 个版本

Double acceptor in p-type GaAsN grown by chemical beam epitaxy

O Elleuch, L Wang, KH Lee, K Ikeda, N Kojima… - Journal of Crystal …, 2015 - Elsevier
The properties of the acceptor states in GaAsN grown by chemical beam epitaxy (CBE) are
studied by analyzing their charges based on the Poole–Frenkel model. Deep level transient …
被引用次数：1 相关文章 所有 3 个版本