Methods and apparatus for creating a dual metal interconnect on a substrate. In some
embodiments, a first liner of a first nitride material is deposited into at least one 1× feature …

Methods and apparatus for forming an interconnect, including: depositing a first barrier layer
upon a top surface of a via and a top surface of a trench; filling the via with a first metal …

Integrated circuit devices and methods of forming the same are provided. The integrated
circuit devices may include a first insulating layer and a plurality of metal wires on the first …

Techniques are provided to fabricate metallic interconnect structures in a single
metallization level, wherein different width metallic interconnect structures are formed of …

Abstract Systems and methods are provided for monitoring wafer bonding and for detecting
or determining defects in a wafer bond formed between two semiconductor wafers. A wafer …

A semiconductor device includes a first underlying metal line and a second underlying metal
line in a first dielectric layer over a substrate. The semiconductor device includes a first metal …

Abstract Systems and methods are provided for monitoring wafer bonding and for detecting
or determining defects in a wafer bond formed between two semiconductor wafers. A wafer …

A method includes receiving an integrated circuit (IC) layout having a plurality of metal
features in a metal layer. The method also includes classifying the plurality of metal features …

A method of forming a BEOL interconnect structure having improved resistance-capacitance
is provided in which a via metal layer is created by a first metallization process and …

To achieve the foregoing and other aspects of the present disclosure, via structures of
passive semiconductor devices and methods of forming the same are presented. According …