The gate defect of the ferroelectric HfO 2-based Si field-effect transistor (Si FeFET) plays a
dominant role in its reliability issue. The first-principles calculations are an effective method …

The sensing properties of CNT-BNNT-CNT heterostructures toward NO 2, O 2 and H 2 O has
been theoretically investigated applying first principles density function theory in …

The charge-trapping process, with HfO 2 film as the charge-capturing layer, has been
investigated by using in situ electron energy-loss spectroscopy and in situ energy-filter …

Ab initio calculations were employed to investigate the influence of Fluorine doping in the
gate dielectric stacks of state-of-the-art metal-oxide-semiconductor field-effect transistors …

An important source of degradation in thin dielectric material layers is the generation and
migration of oxygen vacancies. We investigated the formation of Frenkel pairs (FPs) in HfO2 …

This paper reports on the low-dose-rate radiation response of Al-HfO 2/SiO 2-Si MOS
devices, where the gate dielectric was formed by atomic layer deposition with 4.7 nm …

A powerful characterization technique, pulse capacitance-voltage (CV) technique, was used
to investigate oxide traps before and after annealing for lanthanide zirconium oxide thin films …

This paper reports the low-dose-rate radiation response of Al-HfO2/SiO2–Si MOS devices, in
which the gate dielectric was formed by atomic layer deposition (ALD) with 5-nm equivalent …

The models of electro-physical effects built-into Sentaurus TCAD have been tested. The
models providing an adequate modeling of deep submicron high-k MOSFETs have been …

We have carried out a combined experimental and theoretical study on the influence of
lanthanum, nitrogen, and fluorine treatments on the electric properties of high-k metal gate …