Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …

In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …

Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate,
and surface passivation | Journal of Applied Physics | AIP Publishing Skip to Main Content …

This letter reports an in-depth study of the negative threshold voltage instability in GaN-on-Si
metal-insulator–semiconductor high electron mobility transistors with partially recessed …

In this paper, we carried out a systematic comparison between the enhancement-mode GaN-
based fully recessed metal-insulator-semiconductor field-effect transistors (MIS-FETs) and …

This paper presents a systematic characterization of electronic states at insulators/(Al) GaN
interfaces, particularly focusing on insulator/AlGaN/GaN structures. First, we review …

To investigate current linearity and operation stability of metal–oxide–semiconductor (MOS)
AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and …

Insulated-gate GaN-based transistors can fulfill the emerging demands for the future
generation of highly efficient electronics for high-frequency, high-power and high …

In situ X-ray photoelectron spectroscopy and low energy electron diffraction are performed to
study the formation of a crystalline oxide on the AlGaN surface. The oxidation of the AlGaN …

This letter demonstrated AlGaN/GaN enhancement-mode (E-mode) high-electron-mobility
transistors (HEMTs) with 30-nm Pb (Zr, Ti) O 3 ferroelectric gate dielectric. The high-quality …