SRAM cell design challenges in modern deep sub-micron technologies: An overview
W Gul, M Shams, D Al-Khalili - Micromachines, 2022 - mdpi.com
Microprocessors use static random-access memory (SRAM) cells in the cache memory
design. As a part of the central computing component, their performance is critical. Modern …
design. As a part of the central computing component, their performance is critical. Modern …
Van der Waals negative capacitance transistors
The Boltzmann distribution of electrons sets a fundamental barrier to lowering energy
consumption in metal-oxide-semiconductor field-effect transistors (MOSFETs). Negative …
consumption in metal-oxide-semiconductor field-effect transistors (MOSFETs). Negative …
Recent advances in negative capacitance FinFETs for low-power applications: a review
V Chauhan, DP Samajdar - IEEE Transactions on Ultrasonics …, 2021 - ieeexplore.ieee.org
In the contemporary era of Internet-of-Things (IoT), there is an extensive search for
competent devices which can operate at ultralow voltage supply. Due to the restriction of …
competent devices which can operate at ultralow voltage supply. Due to the restriction of …
Improved subthreshold swing and short channel effect in FDSOI n-channel negative capacitance field effect transistors
Negative capacitance (NC) FETs with channel lengths from 30 nm to, gated with ferroelectric
hafnium zirconium oxide are fabricated on fully depleted silicon-on-insulator (FDSOI) …
hafnium zirconium oxide are fabricated on fully depleted silicon-on-insulator (FDSOI) …
Physical insights on negative capacitance transistors in nonhysteresis and hysteresis regimes: MFMIS versus MFIS structures
We present a comprehensive comparison of the two different types of ferroelectric negative
capacitance FET (NCFET) structures: metal-ferroelectric-metal-insulator-semiconductor …
capacitance FET (NCFET) structures: metal-ferroelectric-metal-insulator-semiconductor …
Negative differential resistance in negative capacitance FETs
We report the investigation of negative differential resistance (NDR) in negative capacitance
(NC) germanium (Ge) pFETs. The NDR in NC transistors is attributed to the coupling of drain …
(NC) germanium (Ge) pFETs. The NDR in NC transistors is attributed to the coupling of drain …
Impact of variability on processor performance in negative capacitance finfet technology
In this work, we investigate for the first time the impact of Negative Capacitance FinFET (NC-
FinFET) technology on the performance of processors under the effects of process variations …
FinFET) technology on the performance of processors under the effects of process variations …
Negative capacitance transistor to address the fundamental limitations in technology scaling: Processor performance
Negative capacitance field-effect transistor (NCFET) addresses one of the key fundamental
limits in technology scaling, akin to the non-scalable Boltzmann factor, by offering a sub …
limits in technology scaling, akin to the non-scalable Boltzmann factor, by offering a sub …
Compact modeling of drain current, charges, and capacitances in long-channel gate-all-around negative capacitance MFIS transistor
In this paper, we present a surface potential-based explicit continuous model for a metal-
ferroelectric-insulator-semiconductor (MFIS) type gate-all-around negative capacitance …
ferroelectric-insulator-semiconductor (MFIS) type gate-all-around negative capacitance …
Impact of interface traps on negative capacitance transistor: Device and circuit reliability
In this work, we investigate the impact of Si-SiO 2 interface traps on the performance of
negative capacitance transistor, which is a promising emerging technology that aims at …
negative capacitance transistor, which is a promising emerging technology that aims at …