[HTML][HTML] Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN
The recently demonstrated semiconductor grafting approach allows one to create an abrupt,
low interface-trap-density heterojunction between a high-quality p-type single-crystalline …
low interface-trap-density heterojunction between a high-quality p-type single-crystalline …
Heterostructure and Interfacial Engineering for Low-Resistance Contacts to Ultra-Wide Bandgap AlGaN
Y Zhu, AA Allerman, C Joishi, J Pratt… - arXiv preprint arXiv …, 2024 - arxiv.org
We report on the heterostructure and interfacial engineering of metalorganic chemical vapor
deposition (MOCVD) grown reverse-graded contacts to ultra-wide bandgap AlGaN. A record …
deposition (MOCVD) grown reverse-graded contacts to ultra-wide bandgap AlGaN. A record …