In this paper, radio frequency (RF) stability performance of double gate junctionless
transistor for different spacer material, the width of spacer, and bias conditions is reported …

This paper presents a comprehensive investigation of electrostatics and transport
characterization of GaN double-channel (DC) MOS-HEMT. Upon derivation of a polynomial …

In this work we investigate the impact of quantum mechanical effects on the device
performance of n-type silicon nanowire transistors (NWT) for possible future CMOS …

This article discusses the electrical stability of MOS structures on n-and p-type GaN for two
different dielectrics, AlON and Al2O3, deposited by atomic layer deposition (ALD). Threshold …

We report the characteristics of InGaAs-based independent double-gate FinFETs with Al 2 O
3/LaAlO 3 as gate dielectric. The device can be operated in three different modes (ie, single …

In this paper, the electrostatic characteristics of enhancement mode GaN double channel
MOS-HEMT has been investigated. A polynomial analytical expression establishing a …

This paper presents an analytical investigation of the drain current model for symmetric short
channel InGaAs gate-all-around (GAA) MOSFETs valid from depletion to strong inversion …

This work presents the evaluation, as well as comparison of Capacitance-Voltage (CV)
characteristic and threshold voltage variation of two different structures of Junction Less …

In this work, quantum ballistic simulation study of a III–V tri-gate MOSFET has been
presented. At the same time, effects of device parameter variation on ballistic, subthreshold …

This paper presents an analytical investigation of the electrostatic properties of a moderately
doped symmetric gate-all-around nanowire MOSFET having InGaAs channel. The model is …