Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …

Recent progress in the SiC material and ultrahigh-voltage devices is reviewed. Regarding
the material issues, fast epitaxial growth of high-purity epitaxial layers and reduction of basal …

We investigated the dependency of minority carrier lifetimes on the nitrogen concentration,
temperature, and the injected carrier concentration for highly nitrogen-doped 4H-SiC …

SiC bipolar degradation, which is caused by stacking fault expansion from basal plane
dislocations in a SiC epitaxial layer or near the interface between the epitaxial layer and the …

Impacts of extended defects on performance and reliability of SiC power devices are
reviewed. Threading dislocations in the state-of-the-art SiC wafers do not work as the major …

Recent progress and current understanding of carrier lifetimes and avalanche phenomena
in silicon carbide (SiC) are reviewed. The acceptor level of carbon vacancy (VC), called the …

We investigated the relationship between the dislocation velocity and the injected carrier
concentration on the expansion of single Shockley-type stacking faults by monitoring the …

We evaluate the stacking faults (SFs) expansion from basal plane dislocations (BPDs)
converted into threading edge dislocations (TEDs) under the current stress to the pn devices …

A superjunction (SJ) structure in power devices is compatible with low specific on-resistance
and high breakdown voltage. To fabricate the SJ structure in SiC power devices, the …

Wide-ranging control of carrier lifetimes in n-type epilayers by vanadium (V) doping is
attempted toward not only developing a buffer layer to prevent the stacking fault expansion …