Progress in ultraviolet photodetectors based on II–VI group compound semiconductors
J Wang, Y Xing, F Wan, C Fu, CH Xu… - Journal of materials …, 2022 - pubs.rsc.org
Ultraviolet (UV) photodetectors (PDs) have found widespread application in various fields,
such as environmental protection, life sciences, secure communications, automated …
such as environmental protection, life sciences, secure communications, automated …
Synthesis, electrical and photo-sensing characteristics of the Al/(PCBM/NiO: ZnO)/p-Si nanocomposite structures
In this study, metal-oxide (NiO: ZnO) nanocomposites mixed with different weight-
percentages (2, 10, 20% NiO) content were coated on the p-Si wafer via spin-coating …
percentages (2, 10, 20% NiO) content were coated on the p-Si wafer via spin-coating …
GaAsBi: from molecular beam epitaxy growth to devices
RD Richards, NJ Bailey, Y Liu… - … status solidi (b), 2022 - Wiley Online Library
GaAsBi has been researched as a candidate material for optoelectronic devices for around
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …
[HTML][HTML] Low bandgap GaAsNBi solar cells
The development of low bandgap GaAsNBi solar cells grown using MBE is reported. The
devices include a pin heterostructure with GaAsNBi as the i-layer. The substrate rotation is …
devices include a pin heterostructure with GaAsNBi as the i-layer. The substrate rotation is …
MOVPE growth and characterization of GaAs/GaAsBi/GaAs pin structure
In this work, we report on the epitaxial growth and characterization of the
GaAs/GaAsBi/GaAs pin structure. The samples were grown on a GaAs (001) substrate using …
GaAs/GaAsBi/GaAs pin structure. The samples were grown on a GaAs (001) substrate using …
Improving the photovoltaic properties of GaAs/GaAsBi pin diodes by inserting a compositionally graded layer at the hetero-interface
H Kawata, S Hasegawa, H Nishinaka… - Semiconductor …, 2022 - iopscience.iop.org
We investigated the effect of inserting a compositionally graded layer at the GaAsBi/GaAs
interface on the photovoltaic and light-emission properties of GaAs/GaAsBi pin diodes …
interface on the photovoltaic and light-emission properties of GaAs/GaAsBi pin diodes …
Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and …
We investigate electronic transport properties of as-grown and annealed n-type modulation-
doped Al 0.15 Ga 0.85 As/GaAs 1− x Bi x (x= 0 and 0.04) quantum well (QW) structures …
doped Al 0.15 Ga 0.85 As/GaAs 1− x Bi x (x= 0 and 0.04) quantum well (QW) structures …
Fabrication of a GaAs/GaNAsBi solar cell and its performance improvement by thermal annealing
H Kawata, S Hasegawa, J Matsumura… - Semiconductor …, 2021 - iopscience.iop.org
To evaluate the performance of GaNAsBi alloys as solar cell materials, a GaNAsBi double-
heterostructure pin solar cell was fabricated using plasma-assisted solid source molecular …
heterostructure pin solar cell was fabricated using plasma-assisted solid source molecular …
A quantitative analysis of electronic transport in n-and p-type modulation-doped GaAsBi/AlGaAs quantum well structures
Electronic transport properties of as-grown and thermally annealed n-and p-type modulation-
doped GaAsBi/AlGaAs quantum well (QW) structures were investigated. Hall mobility of as …
doped GaAsBi/AlGaAs quantum well (QW) structures were investigated. Hall mobility of as …
Frequency effect on electrical and dielectric performance of Au/n–GaAs structure with RF sputtering MoO3 interfacial layer
Ç Çetinkaya - Journal of Materials Science: Materials in Electronics, 2022 - Springer
The effect of frequency on the electrical and dielectric properties of the metal–semiconductor
structure with Molybdenum trioxide (MoO3) interfacial layer was investigated. MoO3 thin film …
structure with Molybdenum trioxide (MoO3) interfacial layer was investigated. MoO3 thin film …