Investigating wafer quality in industrial czochralski‐grown gallium‐doped p‐type silicon ingots with melt recharging
Herein, a systematic study of the electronic quality of gallium‐doped p‐type silicon wafers
from Czochralski‐grown ingots with melt recharging is presented. It is found that in the as …
from Czochralski‐grown ingots with melt recharging is presented. It is found that in the as …
Comprehensive characterization of efficiency limiting defects in the swirl-shaped region of Czochralski silicon
Z Wang, X Zhu, S Yuan, X Yu, D Yang - Solar Energy Materials and Solar …, 2022 - Elsevier
Abstract For Czochralski silicon (Cz-Si) solar cells, swirl-shaped regions in silicon wafers
could lead to efficiency degradation, usually accompanied by hot spots and thermal …
could lead to efficiency degradation, usually accompanied by hot spots and thermal …
Passivation of ring defects in czochralski-grown silicon using magnesium fluoride films
This work investigates the potential application of magnesium fluoride (MgF x) films and
compares its effectiveness to conventional silicon nitride (SiN x: H) for passivating ring …
compares its effectiveness to conventional silicon nitride (SiN x: H) for passivating ring …
Characterisation of striations in n-type silicon wafer processed with polysilicon contacts
We analysed the electronic and optical properties of oxygen-related striations in n-type
Czochralski silicon wafers that underwent polysilicon contact process using deep level …
Czochralski silicon wafers that underwent polysilicon contact process using deep level …
Comprehensive Model for Charge Carrier Recombination in Czochralski‐Grown Silicon Due to Oxygen Precipitation in Industrial Solar Cell Manufacturing
Oxygen precipitates are among the most detrimental oxygen‐related silicon bulk defects
formed during solar cell manufacturing. These defects are formed only during high …
formed during solar cell manufacturing. These defects are formed only during high …
Ring‐Like Defect Formation in N‐Type Czochralski‐Grown Silicon Wafers during Thermal Donor Formation
This article presents experimental and simulation studies on the formation of recombination‐
active ring‐like defects during thermal donor (TD) formation at 450° C in n‐type Czochralski …
active ring‐like defects during thermal donor (TD) formation at 450° C in n‐type Czochralski …
Analysis of Te inclusion striations in (Cd, Zn) Te crystals grown by traveling heater method
J Zou, A Fauler, AS Senchenkov, NN Kolesnikov… - Crystals, 2021 - mdpi.com
The growth of (Cd, Zn) Te (CZT) crystals and the improvement of the crystal quality are part
of a research project towards experiments under microgravity using the Traveling Heater …
of a research project towards experiments under microgravity using the Traveling Heater …
Ring defects in n-type Czochralski-grown silicon: A high spatial resolution study using Fourier-transform infrared spectroscopy, micro-photoluminescence, and micro …
We investigated ring defects induced by a two-step anneal in n-type Czochralski-grown
silicon wafers using a combination of high spatial resolution Fourier Transform Infrared …
silicon wafers using a combination of high spatial resolution Fourier Transform Infrared …
Impact of gettering and hydrogenation on sub-band-gap luminescence from ring defects in Czochralski-grown silicon
Ring defects often occur in n-type Czochralski-grown silicon wafers during intermediate-to
high-temperature annealing and become more recombination-active with increasing anneal …
high-temperature annealing and become more recombination-active with increasing anneal …
Photoluminescence spectroscopy of thermal donors and oxygen precipitates formed in czochralski silicon at 450° C
Photoluminescence spectra have been measured at 80 K in Czochralski-grown silicon
wafers annealed at 450° C, causing thermal donor and oxygen-precipitate generation. Six …
wafers annealed at 450° C, causing thermal donor and oxygen-precipitate generation. Six …