In this review we have examined the crystallization behavior of a-Si over the
temperaturerange from 500° C to∼ 1380° C. We have shown that SPE is a thermally …

Measurements during pulsed laser irradiation indicate that amorphous Si melts at a
temperature 200±50 K below the crystalline value. Below energy densities required to melt …

The annealing of semiconductors is of critical importance for successful electronic device
fabrication. The present review surveys the new field of transient annealing and covers all …

Low-temperature synthesis of polycrystalline germanium (poly-Ge) thin films is of great
interest in thin-film photovoltaic and electronics applications. We demonstrate metal (Al) …

Understanding the dynamics of the laser crystallization (LC) process of Ge thin films by
nanosecond (ns) pulsed infrared (IR) lasers is important for producing homogeneous, crack …

The initial stages of interfacial interactions between Ag nanoparticles and amorphous Ge (a-
Ge) films, in particular the mechanism and kinetics of metal-induced crystallization (MIC) of a …

Three-dimensional (3D) periodic ordering of silicon (Si), an inorganic semiconductor, on the
mesoscale was achieved by combining block copolymer (BCP) self-assembly (SA) based …

The kinetics of intrinsic and dopant-enhanced solid-phase epitaxy (SPE) is studied in
amorphous germanium (a-Ge) layers formed by ion implantation on⟨ 100⟩ Ge substrates …

The thermal stability of amorphous Sb 2 Te film can be significantly improved by the addition
of Cu. CuSb 4 Te 2 alloy is considered to be a potential candidate for phase change random …

Crystallization of amorphous germanium (a-Ge) by laser or electron beam heating is a
remarkably complex process that involves several distinct modes of crystal growth and the …