[HTML][HTML] Band alignment of ScAlN/GaN heterojunction
H Fu, JC Goodrich, N Tansu - Applied Physics Letters, 2020 - pubs.aip.org
The natural band alignments of Sc x Al 1− x N/GaN heterojunctions, with Sc-contents
ranging from 0% to 25%, are investigated by first-principles density functional theory with the …
ranging from 0% to 25%, are investigated by first-principles density functional theory with the …
Laser threshold magnetometry using green-light absorption by diamond nitrogen vacancies in an external cavity laser
JL Webb, AFL Poulsen, R Staacke, J Meijer… - Physical Review A, 2021 - APS
Nitrogen vacancy (NV) centers in diamond have attracted considerable recent interest for
use in quantum sensing, promising increased sensitivity for applications ranging from …
use in quantum sensing, promising increased sensitivity for applications ranging from …
Dilute-As InGaNAs/GaN quantum wells for high-efficiency red emitters
The dilute-As InGaNAs-based quantum well (QW) active region and the corresponding large-
overlap design is analyzed by using a self-consistent 6-band method. Our study evaluates …
overlap design is analyzed by using a self-consistent 6-band method. Our study evaluates …
Effects of TMIn flow rate during quantum barrier growth on multi-quantum well material properties and device performance of GaN-based laser diodes
Z Chen, D Zhao, F Liang, Z Liu, J Yang… - Chinese Physics …, 2024 - iopscience.iop.org
Multidimensional influences of indium composition in barrier layers on GaN-based blue
laser diodes (LDs) are discussed from both material quality and device physics …
laser diodes (LDs) are discussed from both material quality and device physics …
Comprehensive optimization of electronic and optical properties of polar III-nitride laser
MMH Polash, S Biswas, MS Alam - Applied Physics B, 2021 - Springer
A detailed investigation is performed to obtain optimized optical performance of polar III-
nitride single quantum well (SQW) semiconductor lasers by band engineering through …
nitride single quantum well (SQW) semiconductor lasers by band engineering through …
Suppressed optical field and electron leakage and enhanced hole injection in InGaN laser diodes with InGaN–GaN–InGaN barriers
L Cheng, J Zhang, J Wang, J Zhang, J Yang… - Journal of Applied …, 2021 - pubs.aip.org
In this study, an InGaN laser diode (LD) with InGaN–GaN–InGaN quantum barriers was
proposed and studied systematically. The energy band diagrams, stimulated recombination …
proposed and studied systematically. The energy band diagrams, stimulated recombination …