Y Shao, H Hu, B Zhang, X Hao, Y Wu - Crystals, 2023 - mdpi.com
The crystallographic-orientation relationship between GaN crystals grown via hydride vapor phase epitaxy (HVPE) on 6H-SiC was investigated. This study employed electron …
In a scanning electron microscope, the backscattered electron intensity modulations are at the origin of the contrast of like-Kikuchi bands and crystalline defects. The Electron …
G Kusch, M Frentrup, N Hu, H Amano… - Journal of Applied …, 2022 - pubs.aip.org
Advances in obtaining untwinned (10 1 3)-oriented semi-polar GaN enable a new crystal orientation for the growth of green and red LED structures. We present a scanning electron …
Intervertebral disc herniation (IVDH) is observed in humans as a result of the alteration of annulus fibrous (AF) and nucleus pulposus (NP) tissue compositions in intervertebral discs …
In this work, devices based on n-GaN/n-In0. 19Ga0. 81N/p-GaN heterostructure grown in (0002) and in (112̅0), on Si (111) and Al2O3 (11̅02) substrates, respectively were …
MA Zambrano Serrano - 2022 - repositorio.cinvestav.mx
En esta tesis se realizó la síntesis y el estudio de las propiedades ópticas, estructurales y eléctricas de la heteroestructura GaN/AlN/Si (111) crecidas mediante la técnica de epitaxia …
T Walther, Y Calahorra… - … Science and Technology, 2020 - eprints.whiterose.ac.uk
This issue contains selected invited and contributed presentations from the 21st international conference on 'Microscopy of Semiconducting Materials' held at Fitzwilliam …
This thesis presents research on the characterisation of group III-nitrides using scanning electron microscope (SEM) techniques. In particular structural and morphological properties …
The rapid ascent of perovskite photovoltaics over the past decade has enabled this technology to now stand on the cusp of commercialisation. However, a successful entry into …