Unravelling the chloride dopant induced film improvement in all-inorganic perovskite absorbers

S Nicholson, J Bruckbauer, PR Edwards… - Journal of Materials …, 2024 - pubs.rsc.org
CsPbI2Br perovskite material has been the focus of much recent research, thanks to its
improved stability over CsPbI3, useful bandgap of 1.9 eV and enhanced thermal stability …

Crystallographic Orientation and Strain in GaN Crystals Grown on 6H-SiC and Sapphire Substrates

Y Shao, H Hu, B Zhang, X Hao, Y Wu - Crystals, 2023 - mdpi.com
The crystallographic-orientation relationship between GaN crystals grown via hydride vapor
phase epitaxy (HVPE) on 6H-SiC was investigated. This study employed electron …

Modelling electron channeling contrast intensity of stacking fault and twin boundary using crystal thickness effect

H Kriaa, A Guitton, N Maloufi - Materials, 2021 - mdpi.com
In a scanning electron microscope, the backscattered electron intensity modulations are at
the origin of the contrast of like-Kikuchi bands and crystalline defects. The Electron …

[HTML][HTML] Defect characterization of {101¯ 3} GaN by electron microscopy

G Kusch, M Frentrup, N Hu, H Amano… - Journal of Applied …, 2022 - pubs.aip.org
Advances in obtaining untwinned (10 1 3)-oriented semi-polar GaN enable a new crystal
orientation for the growth of green and red LED structures. We present a scanning electron …

Examination of annulus fibrosus and nucleus pulposus in cervical and lumbar intervertebral disc herniation patients by scanning acoustic microscopy, scanning …

B Tanoren, B Dipcin, S Birdogan, MB Unlu, C Ozdol… - RSC …, 2024 - pubs.rsc.org
Intervertebral disc herniation (IVDH) is observed in humans as a result of the alteration of
annulus fibrous (AF) and nucleus pulposus (NP) tissue compositions in intervertebral discs …

[PDF][PDF] Dispositivos basados en In₀. ₁₉Ga₀. ₈₁N/GaN sobre Si (111) y Al₂O₃ (1012)

CA Marin Garcia - 2024 - repositorio.cinvestav.mx
In this work, devices based on n-GaN/n-In0. 19Ga0. 81N/p-GaN heterostructure grown in
(0002) and in (112̅0), on Si (111) and Al2O3 (11̅02) substrates, respectively were …

[PDF][PDF] Estudio de la heteroestructura GaN/AIN/Si (111) crecidas por epitaxia de haces moleculares

MA Zambrano Serrano - 2022 - repositorio.cinvestav.mx
En esta tesis se realizó la síntesis y el estudio de las propiedades ópticas, estructurales y
eléctricas de la heteroestructura GaN/AlN/Si (111) crecidas mediante la técnica de epitaxia …

[PDF][PDF] Preface for the special issue on Microscopy of Semiconducting Materials 2019

T Walther, Y Calahorra… - … Science and Technology, 2020 - eprints.whiterose.ac.uk
This issue contains selected invited and contributed presentations from the 21st
international conference on 'Microscopy of Semiconducting Materials' held at Fitzwilliam …

Characterisation of III-nitrides in the scanning electron microscope

A Alasmari - 2021 - stax.strath.ac.uk
This thesis presents research on the characterisation of group III-nitrides using scanning
electron microscope (SEM) techniques. In particular structural and morphological properties …

Low Dose Analytical Electron Microscopy of Hybrid Perovskite Photovoltaic Devices

F Kosasih - 2022 - repository.cam.ac.uk
The rapid ascent of perovskite photovoltaics over the past decade has enabled this
technology to now stand on the cusp of commercialisation. However, a successful entry into …