Wurtzite and fluorite ferroelectric materials for electronic memory
Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …
continued research interest since their discovery more than 100 years ago. The …
New-generation ferroelectric AlScN materials
Ferroelectrics have great potential in the field of nonvolatile memory due to programmable
polarization states by external electric field in nonvolatile manner. However, complementary …
polarization states by external electric field in nonvolatile manner. However, complementary …
2D Ferroelectrics and ferroelectrics with 2D: Materials and device prospects
C Leblanc, S Song, D Jariwala - Current Opinion in Solid State and …, 2024 - Elsevier
Ferroelectric and two-dimensional (2D) materials are both heavily investigated classes of
electronic materials. This is unsurprising since they both have superlative fundamental …
electronic materials. This is unsurprising since they both have superlative fundamental …
Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications
W Yang, C Yu, H Li, M Fan, X Song, H Ma… - Journal of …, 2023 - iopscience.iop.org
The finding of the robust ferroelectricity in HfO 2-based thin films is fantastic from the view
point of both the fundamentals and the applications. In this review article, the current …
point of both the fundamentals and the applications. In this review article, the current …
A three-terminal non-volatile ferroelectric switch with an insulator–metal transition channel
Ferroelectrics offer a promising material platform to realize energy-efficient non-volatile
memory technology with the FeFET-based implementations being one of the most area …
memory technology with the FeFET-based implementations being one of the most area …
Novel Two-Terminal Synapse/Neuron Based on an Antiferroelectric Hafnium Zirconium Oxide Device for Neuromorphic Computing
Functionally diverse devices with artificial neuron and synapse properties are critical for
neuromorphic systems. We present a two-terminal artificial leaky-integrate-fire (LIF) neuron …
neuromorphic systems. We present a two-terminal artificial leaky-integrate-fire (LIF) neuron …
Quasi-nondestructive read out of ferroelectric capacitor polarization by exploiting a 2tnc cell to relax the endurance requirement
In this work, we exploit a 2TnC ferroelectric random access memory (FeRAM) cell design to
realize the quasi-nondestructive readout (QNRO) of ferroelectric polarization () in a …
realize the quasi-nondestructive readout (QNRO) of ferroelectric polarization () in a …
Machine learning–guided optimization of coercive field in Al1−xScxN thin films for nonvolatile memory
S Das, P Garg, B Mazumder - Journal of the American Ceramic …, 2024 - Wiley Online Library
This study employs a data‐driven machine learning approach to investigate specific
ferroelectric properties of Al1− xScxN thin films, targeting their application in next‐generation …
ferroelectric properties of Al1− xScxN thin films, targeting their application in next‐generation …
ADRA: extending digital computing-in-memory with asymmetric dual-row-activation
In this letter, we propose an asymmetric dual row activation scheme called ADRA for
enhancing digital computing-in-memory (CiM) based on in-memory operands. ADRA solves …
enhancing digital computing-in-memory (CiM) based on in-memory operands. ADRA solves …
Phase Change Memory (PCM) for High Density Storage Class Memory (SCM) Applications
G Lama - 2022 - theses.hal.science
The amount of data generated is increasing exponentially in the last years and is expected
to reach 175 Zettabytes by 2025 [1]. This data explosion is pushing memory technologies to …
to reach 175 Zettabytes by 2025 [1]. This data explosion is pushing memory technologies to …